Abstract
We have synthesized amorphous-semiconductor superlattices consisting of alternating layers of -type and -type doped, hydrogenated, amorphous silicon. These new amorphous semiconductor structures exhibit a long-lived () excess conductivity after a brief light exposure at room temperature. This effect may be attributed to spatial separation of the photocarriers by the junction fields or, alternatively, to defect centers having a barrier against retrapping of photoexcited carriers.
- Received 2 August 1984
DOI:https://doi.org/10.1103/PhysRevLett.53.1602
©1984 American Physical Society