Strontium-induced oxygen defect structure and hole doping in La2xSrxCuO4

Zhengquan Tan, M. E. Filipkowski, J. I. Budnick, E. K. Heller, D. L. Brewe, B. L. Chamberland, C. E. Bouldin, J. C. Woicik, and D. Shi
Phys. Rev. Lett. 64, 2715 – Published 28 May 1990
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Abstract

We have discovered that the apical oxygen with a 2.35-Å La-O bond length is removed when La is substituted by Sr in polycrystalline La2xSrxCuO4 under normal preparation conditions. This apical oxygen can be partially filled by oxygen annealing. It is reasoned that a defect oxygen is trapped at an interstitial site near the Sr atom. We present evidence that this defect oxygen is intrinsic to Sr doping, independent of processing conditions. We propose that this defect oxygen serves as a mechanism for hole doping similar to that in the superconducting oxygen-rich La2CuO4+y.

  • Received 29 November 1989

DOI:https://doi.org/10.1103/PhysRevLett.64.2715

©1990 American Physical Society

Authors & Affiliations

Zhengquan Tan, M. E. Filipkowski, J. I. Budnick, E. K. Heller, D. L. Brewe, B. L. Chamberland, C. E. Bouldin, J. C. Woicik, and D. Shi

  • University of Connecticut, Storrs, Connecticut 06269
  • National Institute of Standards and Technology, Gaithersburg, Maryland 20899
  • Argonne National Laboratory, Argonne, Illinois 60439

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Vol. 64, Iss. 22 — 28 May 1990

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