Abstract
We have measured Raman scattering by LO phonons in GaAs in a magnetic field (≤12.8 T) at 10 K. The intensity displays Landau-level oscillations. This effect shows promise as a modulation technique for the investigation of interband magnetoabsorption. As an application we have studied the nonparabolicity of the conduction band of GaAs for energies up to 0.4 eV above its bottom. Standard k⋅p expansions, including the and conduction and the valence bands, cannot explain the observed dispersion. It can be explained by inclusion of interactions with higher bands.
- Received 27 May 1987
DOI:https://doi.org/10.1103/PhysRevLett.59.700
©1987 American Physical Society