Recombination of Vacancies and Interstitials in KBr at Low Temperatures

N. Itoh, B. S. H. Royce, and R. Smoluchowski
Phys. Rev. 137, A1010 – Published 1 February 1965
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Abstract

Measurements and a detailed analysis were made of the thermal annealing of the α band in KBr x rayed at temperatures below 20°K. Four distinct annealing stages at 11, 17, 19, and 21°K were resolved, the first three stages corresponding to first order reactions and the fourth stage to a second order reaction. The activation energies for the annealing stages were about 0.015, 0.03, 0.04, and 0.06 eV, respectively. The first three stages were interpreted as a correlated recombination of close pairs of bromide vacancies and interstitials, and the fourth stage as the recombination of more distant defect pairs through a free migration of an interstitialcy. The activation energy 0.06 eV is interpreted as the free migration energy of a bromide-ion interstitialcy. Interaction energies between a vacancy and an interstitial ion in several configurations were calculated and possible annealing sequences for the first three annealing stages are proposed. The observed low pre-exponential factor for the first stage is also discussed.

  • Received 9 June 1964

DOI:https://doi.org/10.1103/PhysRev.137.A1010

©1965 American Physical Society

Authors & Affiliations

N. Itoh*, B. S. H. Royce, and R. Smoluchowski

  • Solid State and Materials Program, Princeton University, Princeton, New Jersey

  • *On leave from Faculty of Engineering, Osaka University, Osaka, Japan.

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Issue

Vol. 137, Iss. 3A — February 1965

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