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Title:	Calculation of thermodynamic and transport properties of intrinsic point defects in silicon
Source:	Physical Review B: Condensed Matter [0163-1829] Maroudas, Dimitris yr:1993

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description	1.	Sinno, T. "On the dynamics of the oxidation-induced stacking-fault ring in as-grown Czochralski silicon crystals." Applied physics letters 70.17 (1997): 2250-.
description	2.	LUTSKO, J. "MOLECULAR-DYNAMICS CALCULATION OF FREE-ENERGY." The Journal of chemical physics 88.10 (1988): 6525-6528.
description	3.	Sinno, T. "Point defect dynamics and the oxidation-induced stacking-fault ring in Czochralski-grown silicon crystals." Journal of the Electrochemical Society 145.1 (1998): 302-318.
description	4.	Angelskår, H. "Characterization of Oxidation-Induced Stacking Fault Rings in Cz Silicon: Photoluminescence Imaging and Visual Inspection After Wright etch." Energy Procedia 27 (2012): 160-166.
description	5.	QUEISSER, PGG J. "GROWTH OF LATTICE DEFECTS IN SILICON DURING OXIDATION." Journal of applied physics 35.10 (1964): 3066-.
description	6.	MAROUDAS, D. "MODEL FOR DISLOCATION LOCKING BY OXYGEN GETTERING IN SILICON-CRYSTALS." Applied physics letters 58.17 (1991): 1842-1844.
description	7.	Wang, Z. "Enhanced oxygen precipitation in silicon due to grown-in spatial inhomogeneities in the oxygen distribution." Applied physics letters 78.2 (2001): 180-182.
description	8.	Sinno, T. "Modeling Microdefect Formation in Czochralski Silicon." Journal of the Electrochemical Society 146.6 (1999): 2300-2312.
description	9.	Fair, R B. "On the Doping Dependence of Oxidation-Induced Stacking Fault Shrinkage in Silicon." Journal of the Electrochemical Society 129.10 (1982): 2319-2321.
description	10.	Dornberger, E. "Influence of boron concentration on the oxidation-induced stacking fault ring in Czochralski silicon crystals." Journal of Crystal Growth 180.3-4 (1997): 343-352.
description	11.	Pizzini, S. "Rod-like defects in CZ-Si investigated by spin resonance and photoluminescence spectroscopies." Physica status solidi. C, Conferences and critical reviews 2.6 (2005): 1807-.
description	12.	Tomaszewski, Paweł E. "Jan Czochralski—father of the Czochralski method." Journal of Crystal Growth 236.1 (2002): 1-4.
description	13.	MAROUDAS, D. "ANALYSIS OF THE EFFECTS OF OXYGEN MIGRATION ON DISLOCATION-MOTION IN SILICON." Journal of applied physics 69.7 (1991): 3865-3877.
description	14.	Graf, D. "Characterization of crystal quality by crystal originated particle delineation and the impact on the silicon wafer surface." Journal of the Electrochemical Society 145.1 (1998): 275-284.
description	15.	Sinno, T. "Boron retarded self-interstitial diffusion in Czochralski growth of silicon crystals and its role in oxidation-induced stacking-fault ring dynamics." Applied physics letters 75.11 (1999): 1544-1546.
description	16.	Sinno, T. "Atomistic simulation of point defects in silicon at high temperature." Applied physics letters 68.21 (1996): 3028-3030.
description	17.	Voronkov, V. "Intrinsic point defects and impurities in silicon crystal growth." Journal of the Electrochemical Society 149.3 (2002).
description	18.	Sackinger, PA. "A finite element method for analysis of fluid flow, heat transfer and free interfaces in Czochralski crystal growth." International journal for numerical methods in fluids 9.4 (1989): 453-492.
description	19.	Falster, R. "Effect of high temperature pre-anneal on oxygen precipitates nucleation kinetics in Si." Diffusion and defect data. [Pt. B], Solid state phenomena 57-8 (1997): 123-128.
description	20.	Sinno, T.. "A bottom-up multiscale view of point-defect aggregation in silicon." Journal of Crystal Growth 303.1 SPEC. ISS. (2007): 5-11.