Determination of conduction-band states in GaAs(110), InP(110), and InAs(110)

Jürgen Faul, Georg Neuhold, Lothar Ley, Jordi Fraxedas, Stefan Zollner, John D. Riley, and Robert C. G. Leckey
Phys. Rev. B 47, 12625 – Published 15 May 1993
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Abstract

Angle-resolved constant-initial-state spectroscopy (ARCIS) from the valence-band maximum as initial state was used to determine conduction-band energies at the Γ point for GaAs, InP, and InAs. With the help of nonlocal empirical-pseudopotential (EPM) calculations structure in the ARCIS spectra up to 20 eV could be assigned to particular interband transitions. A group of transitions around 26 eV is derived from the pseudopotential split (220)-umklapp process at the Brillouin-zone center. Above 30 eV there appears to be no correspondence between conduction-band states as calculated in the EPM framework and structure in the spectra. Autoionizing resonances due to surface core excitons have been observed. From their energies surface-core-exciton binding energies in the range 0.5–1.5 eV have been determined for the three compounds.

  • Received 7 August 1992

DOI:https://doi.org/10.1103/PhysRevB.47.12625

©1993 American Physical Society

Authors & Affiliations

Jürgen Faul, Georg Neuhold, and Lothar Ley

  • Institut für Technische Physik, Friedrich-Alexander-Universität Erlangen-Nürnberg, D-8520 Erlangen, Germany

Jordi Fraxedas

  • European Synchrotron Radiation Facility, F-38043 Grenoble, France

Stefan Zollner

  • IBM Thomas J. Watson Research Division, Yorktown Heights, P.O. Box 218, New York 10598

John D. Riley and Robert C. G. Leckey

  • Department of Physics, La Trobe University, Bundoora, Victoria, 3083 Australia

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Vol. 47, Iss. 19 — 15 May 1993

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