Temperature dependence of the energy and broadening parameter of the fundamental band gap of GaSb and <math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><mrow><msub><mrow><mi mathvariant="normal">Ga</mi></mrow><mrow><mn>1</mn><mi>−</mi><mi>x</mi></mrow></msub></mrow><mrow><msub><mrow><mi mathvariant="normal">In</mi></mrow><mrow><mi>x</mi></mrow></msub></mrow><mrow><msub><mrow><mi mathvariant="normal">As</mi></mrow><mrow><mi>y</mi></mrow></msub></mrow><mrow><msub><mrow><mi mathvariant="normal">Sb</mi></mrow><mrow><mn>1</mn><mi>−</mi><mi>y</mi></mrow></msub></mrow><mo>/</mo><mi mathvariant="normal">GaSb</mi></math> <math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><mo>(</mo><mn>0.07</mn><mn></mn><mo><~</mo><mi>x</mi><mo><~</mo><mn>0</mn><mo>.</mo><mn>2</mn><mn>2</mn><mo>,</mo></math> <math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><mn>0.05</mn><mo><~</mo><mi>y</mi><mo><~</mo><mn>0</mn><mo>.</mo><mn>1</mn><mn>9</mn><mo>)</mo></math> quaternary alloys using infrared photoreflectance

Martín Muñoz; Fred H. Pollak; M. B. Zakia; N. B. Patel; J. L. Herrera-Pérez

doi:10.1103/PhysRevB.62.16600

Temperature dependence of the energy and broadening parameter of the fundamental band gap of GaSb and ${Ga}_{1 - x} {In}_{x} {As}_{y} {Sb}_{1 - y} / GaSb$ $(0.07 <~ x <~ 0.22,$ $0.05 <~ y <~ 0.19)$ quaternary alloys using infrared photoreflectance

Martín Muñoz, Fred H. Pollak, M. B. Zakia, N. B. Patel, and J. L. Herrera-Pérez

Phys. Rev. B 62, 16600 – Published 15 December 2000

Abstract

We have measured the temperature dependence of the energy $[E_{0} (T)]$ and broadening parameter $[Γ_{0} (T)]$ of the fundamental gap for GaSb and four samples of ${Ga}_{1 - x} {In}_{x} {As}_{y} {Sb}_{1 - y}$ (lattice matched to GaSb) using infrared photoreflectance. The parameters that describe the temperature variation of the energy (including thermal-expansion effects) were evaluated using both the semiempirical Vashni relation as well as an equation that incorporates the Bose-Einstein occupation factor. The behavior of $Γ_{0} (T)$ was described by a Bose-Einstein-type equation.

Received 24 May 2000

DOI:https://doi.org/10.1103/PhysRevB.62.16600

Authors & Affiliations

Martín Muñoz^* and Fred H. Pollak^†

Physics Department and New York Center for Advanced Technology in Ultrafast Photonic Materials and Applications, Brooklyn College of the City University of New York, Brooklyn, New York 11210

M. B. Zakia and N. B. Patel

LPD/DFA Instituto de Física e Centro de Componentes Semiconductores, Univesidade Estadual de Campinas, Caixa Postal 6165, 13081-970, Campinas, São Paulo, Brazil

J. L. Herrera-Pérez

Centro de Investigación en Ciencia Aplicada y Tecnología Avanzada CICATA-IPN Mexico Distrito Federal, México

^*Permanent address: Departamento de Física CINVESTAV-IPN, México D.F., México, 07300. Electronic address: martin@fis.cinvestav.mx
^†Also at the Graduate School and University Center of the City University of New York, New York, NY 10016. Electronic address: fhpbc@cunyvm.cuny.edu

References (Subscription Required)

Click to Expand

Issue

Vol. 62, Iss. 24 — 15 December 2000

Reuse & Permissions

Access Options

Author publication services for translation and copyediting assistance advertisement

Physical Review B

covering condensed matter and materials physics