Current-driven hysteresis effects in manganite spintronics devices

I. Pallecchi, L. Pellegrino, A. Caviglia, E. Bellingeri, G. Canu, G. C. Gazzadi, A. S. Siri, and D. Marré
Phys. Rev. B 74, 014434 – Published 26 July 2006

Abstract

By carrying out differential resistance measurements in oxygen deficient La0.67Ba0.33MnO3δ thin films at different magnetic fields, in submicrometric constricted regions patterned by focused ion beam, we find evidence of hysteretic resistance behavior as a function of both the external magnetic field and dc bias current. The resistance curves exhibit a marked asymmetry with respect to the polarity of the current. We suggest that the spin-polarized injected current exerts a torque on magnetic domains, whose rotation accounts for the hysteretic resistance changes. The memory effect of such constrictions is potentially interesting both for studying micromagnetic effects and in view of spintronics devices applications.

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  • Received 11 April 2006

DOI:https://doi.org/10.1103/PhysRevB.74.014434

©2006 American Physical Society

Authors & Affiliations

I. Pallecchi*

  • CNR-INFM LAMIA, Corso Perrone 24, 16152 Genova, Italy

L. Pellegrino

  • Dipartimento di Fisica, Università di Genova, Via Dodecaneso 33, 16146 Genova, Italy and CNR-INFM LAMIA, Corso Perrone 24, 16152 Genova, Italy

A. Caviglia

  • Dipartimento di Fisica, Università di Genova, Via Dodecaneso 33, 16146 Genova, Italy

E. Bellingeri

  • CNR-INFM LAMIA, Corso Perrone 24, 16152 Genova, Italy

G. Canu

  • Dipartimento di Fisica, Università di Genova, Via Dodecaneso 33, 16146 Genova, Italy

G. C. Gazzadi

  • CNR-INFM-National Research Center on nanoStructures and bioSystems at Surfaces-S3, Via G. Campi 213/A-41100 Modena, Italy

A. S. Siri and D. Marré

  • CNR-INFM LAMIA and Università di Genova, Corso Perrone 24, 16152 Genova, Italy

  • *Electronic address: pallecchi@fisica.unige.it

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Vol. 74, Iss. 1 — 1 July 2006

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