ExLibris header image
SFX Logo
Title: A strong reduction in the density of near-interface traps at the SiO2∕4H‐SiC interface by sodium enhanced oxidation
Source:

Journal of Applied Physics [0021-8979] Allerstam, F yr:2007


Collapse list of basic services Basic
Sorry, no full text available...
Please use the document delivery service (see below)  
Holding information
Holdings in library search engine ALBERT GO
Document delivery
Request document via Library/Bibliothek GO
Users interested in this article also expressed an interest in the following:
1. Sveinbjörnsson, T.E.. "Interface trap properties of thermally oxidized n-type 4H–SiC and 6H–SiC." Solid-state electronics 49.4 (2005): 545-553. Link to SFX for this item
2. Senzaki, J. "Excellent effects of hydrogen postoxidation annealing on inversion channel mobility of 4H-SiC MOSFET fabricated on (11 2 0) face." IEEE Electron Device Letters 23.1 (2002): 13-15. Link to SFX for this item
3. Shenoy, J N. "High-voltage double-implanted power MOSFET's in 6H-SiC." IEEE Electron Device Letters 18.3 (1997): 93-95. Link to SFX for this item
4. Ólafsson, P.-Å. O. "High field effect mobility in Si face 4H-SiC MOSFET transistors." Electronics letters 40.8 (2004): 508-510. Link to SFX for this item
Select All Clear All

Expand list of advanced services Advanced
A service provided by the Library of the Wissenschaftspark Albert Einstein, Potsdam, Germany.
© 2005 SFX by Ex Libris Inc.