ExLibris header image
SFX Logo
Title: Thermoelectric properties of Zn-doped GaSb
Source:

Journal of Applied Physics [0021-8979] Kim, Chang-eun yr:2012


Collapse list of basic services Basic
Sorry, no full text available...
Please use the document delivery service (see below)  
Holding information
Holdings in library search engine ALBERT GO
Document delivery
Request document via Library/Bibliothek GO
Users interested in this article also expressed an interest in the following:
1. Peshel, T. "Experimental investigation of the enthalpy, entropy, and free energy of formation of GaN." Journal of Crystal Growth 311.1 (2008): 185-189. Link to SFX for this item
2. Peshek, Timothy J. "Thermodynamic properties of gallium nitride." Journal of Crystal Growth 322.1 (2011): 114-116. Link to SFX for this item
3. Schott, H. "The free energy, heat, and entropy of formation of l-malic acid." The Journal of biological chemistry 92.3 (1931): 559-567. Link to SFX for this item
4. Hou, X. "A new treatment for kinetics of oxidation of silicon carbide." Ceramics international 35.2 (2009): 603-607. Link to SFX for this item
5. Harafuji, K. "Molecular dynamics simulation for evaluating melting point of wurtzite-type GaN crystal." Journal of applied physics 96.5 (2004): 2501-2512. Link to SFX for this item
6. Leitner, J. "High temperature enthalpy, heat capacity and other thermodynamic functions of solid InN." The Journal of physics and chemistry of solids 65.6 (2004): 1127-1131. Link to SFX for this item
7. Sedmidubsky, D. "Calculation of the thermodynamic properties of A(III) nitrides." Journal of crystal growth 286.1 (2006): 66-70. Link to SFX for this item
8. "Oxidation of Silicon Carbide Composites for Nuclear Applications at Very High Temperatures in Steam." Coatings 12.7: 875-. Link to SFX for this item
9. Jena, D. "Gallium nitride electronics." Semiconductor science and technology 28.7 (2013): 70301-. Link to Full Text for this item Link to SFX for this item
10. Ivantsov, V A. "Physical properties of bulk single-crystal wafers of gallium nitride." Physics of the solid state 39.5: 763-765. Link to SFX for this item
11. Min, Z. "Twin Growth Mechanism of AIP Hexagonal Platelets in an Al-Si Melt." Crystal growth & design 10.6 (2010): 2443-2446. Link to Full Text for this item Link to SFX for this item
12. Ipser, H. "Overview: The emf method as a source of experimental thermodynamic data." CALPHAD 34.3 (2010): 271-278. Link to SFX for this item
13. Bez'yazychnaya, T. "Structural and energy characteristics of native vacancy-type defects in the biaxially stressed GaN lattice." Semiconductors 42.11 (2008): 1255-1258. Link to Full Text for this item Link to SFX for this item
14. Huq, A. "Structural studies of Li3N using neutron powder diffraction." Journal of alloys and compounds 436.1-2 (2007): 256-260. Link to SFX for this item
15. Nord, J. "Modelling of compound semiconductors: analytical bond-order potential for gallium, nitrogen and gallium nitride." Journal of physics. Condensed matter 15.32 (2003): 5649-5662. Link to Full Text for this item Link to SFX for this item
16. Chacko, S. "Why do gallium clusters have a higher melting point than the bulk?" Physical review letters 92.13 (2004): 135506-. Link to Full Text for this item Link to SFX for this item
17. Bere, A. "On the atomic structures, mobility and interactions of extended defects in GaN: dislocations, tilt and twin boundaries." Philosophical magazine 86.15 (2006): 2159-2192. Link to SFX for this item
18. Kang, TT. "InN nanoflowers grown by metal organic chemical vapor deposition." Applied physics letters 89.7 (2006): 71113-. Link to Full Text for this item Link to SFX for this item
19. Davis, R.F. F. "Gallium nitride and related materials: Challenges in materials processing." Acta materialia 51.19 (2003): 5961-5979. Link to SFX for this item
View More...
View Less...
Select All Clear All

Expand list of advanced services Advanced
A service provided by the Library of the Wissenschaftspark Albert Einstein, Potsdam, Germany.
© 2005 SFX by Ex Libris Inc.