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Title:	Analysis of electronic structure of amorphous InGaZnO/SiO2interface by angle-resolved X-ray photoelectron spectroscopy
Source:	Journal of Applied Physics [0021-8979] Ueoka, Y yr:2013

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description	10.	Kamiya, T. "Present status of amorphous InâGaâZnâO thin-film transistors." Science and technology of advanced materials 11.4 (2010): 44305-44305.
description	11.	Capelli, R. "Organic light-emitting transistors with an efficiency that outperforms the equivalent light-emitting diodes." Nature Materials 9.6 (2010): 496-503.
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description	19.	Yang, H. "Vertical Interface Effect on the Physical Properties of Self-Assembled Nanocomposite Epitaxial Films." Advanced materials 21.37 (2009): 3794-3798.
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