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Title:
Electron and hole mobility reduction and Hall factor in phosphorus-compensated p-type silicon
Source:
Journal of Applied Physics [0021-8979] Rougieux, F E yr:2010
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author:
Rougieux, F E
Macdonald, D
Cuevas, A
Ruffell, S
Schmidt, J
Lim, B
Knights, A P
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author:
Rougieux, F E
Macdonald, D
Cuevas, A
Ruffell, S
Schmidt, J
Lim, B
Knights, A P
last name
initials
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author:
Rougieux, F E
Macdonald, D
Cuevas, A
Ruffell, S
Schmidt, J
Lim, B
Knights, A P
last name
initials
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