Language
English
German
^M
Dutch
Spanish
Title:
Trap states in AlGaN/GaN metal-oxide-semiconductor structures with Al2O3 prepared by atomic layer deposition
Source:
Journal of Applied Physics [0021-8979] Gregušová, D yr:2010
Basic
Sorry, no full text available...
Please use the document delivery service (see below)
Holding information
Holdings in library search engine
ALBERT
Document delivery
Request document via
Library/Bibliothek
Users interested in this article also expressed an interest in the following:
description
1.
Ostermaier, C.
"Interface characterization of ALD deposited Al2O3 on GaN by CV method."
Physica status solidi. C, Conferences and critical reviews
2008. 1992-1994.
description
2.
Liu, Z.
"High Microwave-Noise Performance of AlGaN/GaN MISHEMTs on Silicon With Al2O3 Gate Insulator Grown by ALD."
IEEE electron device letters
31.2 (2010): 96-98.
description
3.
Kordos, P.
"Characterization of AlGaN/GaN metal-oxide-semiconductor field-effect transistors by frequency dependent conductance analysis."
Applied physics letters
94.22 (2009): 223512-223512.
description
4.
Hashizume, T.
"Effects of Surface Oxidation of AlGaN on DC Characteristics of AlGaN/GaN High-Electron-Mobility Transistors."
Japanese journal of applied physics
48.2 (2009): 20203-20203.
description
5.
Polyakov, A.
"Studies of Interface States in Sc2 O3 GaN, MgOGaN, and MgScOGaN structures."
Journal of the Electrochemical Society
154.2 (2007): -18.
description
6.
Stoklas, R.
"Enhancement of effective carrier velocity in AIGaN/GaN MOSHFETs with Al2O3 gate oxide."
Physica status solidi. C, Conferences and critical reviews
5.6 (2008): 1935-7.
description
7.
Liu, K. L. H.
"Improved two-dimensional electron gas transport characteristics in AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor with atomic layer-deposited Al2O3 as gate insulator."
Applied physics letters
95.22 (2009): 223501-223501.
description
8.
Kang, B S.
"Hydrogen-induced reversible changes in drain current in Sc 2O3/AlGaN/GaN high electron mobility transistors."
Applied physics letters
84.23 (2004): 4635-4637.
description
9.
Liu, Y. K. T. H.
"Reduced surface leakage current and trapping effects in AlGaN/GaN high electron mobility transistors on silicon with SiN/Al(2)O(3) passivation."
Applied physics letters
98.11 (2011): 113506-113506.
description
10.
Gregugova, D.
"Characterization of AlGaN/GaN MOSHFETs with Al2O3 as gate oxide."
Physica status solidi. C, Conferences and critical reviews
2007. 2720-2723.
description
11.
Minseok, Minseok o.
"Characterization of fast charge trapping in bias temperature instability in metal-oxide-semiconductor field effect transistor with high dielectric constant."
Applied physics letters
96.14 (2010): 142110-142110.
description
12.
Marso, M.
"Origin of improved RF performance of AlGaN/GaN MOSHFETs compared to HFETs."
IEEE transactions on electron devices
53.7 (2006): 1517-23.
description
13.
Ohki, T.
"An over 100 W AlGaN/GaN enhancement-mode HEMT power amplifier with piezoelectric-induced cap structure."
Physica status solidi. C, Current topics in solid state physics
6.6 (2009): 1365-1368.
description
14.
Kim, K.
"Effect of InN Interlayer in Growth of GaN on Si Substrates."
Electrochemical and solid-state letters
13.3 (2010).
description
15.
Futatsuki, T.
"Low-Temperature and Rapid Oxidation of GaN Surface by Saturated Water Vapor at High Pressure."
Japanese journal of applied physics
2009. 4-4.
description
16.
Cordier, Y.
"Windowed growth of AlGaN/GaN heterostructures on Silicon < 111 > substrates for future MOS integration."
Physica status solidi. A, Applied research
206.2 (2009): 371-374.
description
17.
Nakano, Y.
"Deep-level optical spectroscopy investigation of band gap states in AlGaN/GaN hetero-interfaces."
Applied physics express
1.9 (2008): 91101-91101.
description
18.
Simin, G..
"Cryogenic RF switch using III-nitride MOSHFETs."
Electronics letters
45.4 (2009): 207-208.
description
19.
Tataroglu, A.
"Dielectric properties and ac electrical conductivity studies of MIS type Schottky diodes at high temperatures."
Microelectronic Engineering
85.7 (2008): 1518-1523.
description
20.
Yow-Jon, L.
"Nonalloyed ohmic contact formation in Ti/Al contacts to n-type AlGaN."
Journal of physics
41.17 (2008): 175105-175105.
View More...
View Less...
Select All
Clear All
Save Citations
Select Format
ProCite
EndNote
Reference Manager
RefWorks
Submit citation export
Advanced
Author
Other articles by this author? -- in
GeoRef
author:
Gregušová, D
Stoklas, R
Mizue, Ch
Hori, Y
Novák, J
Hashizume, T
Kordoš, P
last name
initials
Other articles by this author? -- in
Online Contents Geosciences
author:
Gregušová, D
Stoklas, R
Mizue, Ch
Hori, Y
Novák, J
Hashizume, T
Kordoš, P
last name
initials
Other articles by this author? -- using
Web of Science
author:
Gregušová, D
Stoklas, R
Mizue, Ch
Hori, Y
Novák, J
Hashizume, T
Kordoš, P
last name
initials
Web Search
Find related information in
a Web Search Engine
Excite
Google
HotBot
Ixquick
ZOO
Ask
Yahoo!
Bing
Naver
Search Terms:
Search for related information in
Google Scholar
Article Title
Author Name
Journal Title
Other Search
Search Terms:
A service provided by the
Library of the Wissenschaftspark Albert Einstein
, Potsdam, Germany.
© 2005 SFX by Ex Libris Inc.