SFX by Ex Libris Inc.

Title:	Actual temperatures of growing surfaces of III-nitride-based materials depending on substrates and forced convection conditions in metal organic chemical vapor deposition
Source:	Journal of Applied Physics [0021-8979] Choi, Suk yr:2009

Basic

Sorry, no full text available...

Please use the document delivery service (see below)

Holding information

Holdings in library search engine ALBERT

Document delivery

Request document via Library/Bibliothek

Users interested in this article also expressed an interest in the following:
description	1.	Yoder, P. "Control of Quantum-Confined Stark Effect in InGaN-Based Quantum Wells." IEEE journal of selected topics in quantum electronics 15.4 (2009): 1080-1091.
description	2.	Suk, C. "Digitally alloyed modulated precursor flow epitaxial growth of AlxGa1-xN layers with AlN and AlyGa1-yN monolayers." Journal of Crystal Growth 311.12 (2009): 3252-6.
description	3.	Choi, S. "Geiger-Mode Operation of GaN Avalanche Photodiodes Grown on GaN Substrates." IEEE photonics technology letters 21.20 (2009): 1526-1528.
description	4.	Suk, C. "Improvement of peak quantum efficiency and efficiency droop in III-nitride visible light-emitting diodes with an InAlN electron-blocking layer." Applied physics letters 96.22 (2010): 221105-221105.
description	5.	Yun, Z. "Low-noise GaN ultraviolet p-i-n photodiodes on GaN substrates." Applied physics letters 94.22 (2009): 221109-221109.
description	6.	Venkatachalam, A. "Nitride band-structure model in a quantum well laser simulator." Optical and quantum electronics 40.5 (2008): 295-9.
description	7.	Kim, H. "Improvement of quantum efficiency by employing active-layer-friendly lattice-matched InAlN electron blocking layer in green light-emitting diodes." Applied physics letters 96.10 (2010): 101102-101102.
description	8.	Bichsel, B. "Experimental and theoretical investigation of the Stark effect for manipulating cold molecules: application to nitric oxide." Physical review. A 75.2 (2007): 23410-.
description	9.	Lefebvre, P. "Carrier dynamics in group-III nitride low-dimensional systems: Localization versus quantum-confined Stark effect." Physica status solidi. B, Basic research 228.1 (2001): 65-72.
description	10.	Mukai, T. "Recent progress in group-III nitride light-emitting diodes." IEEE journal of selected topics in quantum electronics 8.2 (2002): 264-270.
description	11.	Jensen, FA. "Lattice Weyl-Wigner formulation of exact many-body quantum-transport theory and applications to novel solid-state quantum-based devices." Physical review. B, Condensed matter 42.15 (1990): 9429-9457.
description	12.	Dupuis, Russell D. D. "Growth and fabrication of high-performance GaN-based ultraviolet avalanche photodiodes." Journal of Crystal Growth 310.23 (2008): 5217-22.
description	13.	Sridharan, S. "Anisotropic Transient and Stationary Electron Velocity in Bulk Wurtzite GaN." IEEE electron device letters 29.11 (2008): 1190-1192.
description	14.	Kim, H. "Modulated precursor flow epitaxial growth of ternary AlGaN by metalorganic chemical vapor deposition." Journal of Crystal Growth 2008. 4880-4884.
description	15.	Hee, Hee n. "Digitally Alloyed Modulated Precursor Flow Epitaxial Growth of Ternary AIGaN with Binary AIN and GaN Sub-Layers and Observation of Compositional Inhomogeneity." Journal of Electronic Materials 39.5 (2010): 466-72.
description	16.	Zhang, R. "Al incorporation, structural and optical properties of AlxGa1-xN (0.13 <= x <= 0.8) alloys grown by MOCVD." Journal of Crystal Growth 310.21 (2008): 4499-4502.
description	17.	Hawkridge, M. "Erratic dislocations within funnel defects in AlN templates for AlGaN epitaxial layer growth." Applied physics letters 94.17 (2009): 171912-171912.
description	18.	Fischer, A. "Effect of Growth Temperature on the Electron-Blocking Performance of InAlN Layers in Green Emitting Diodes." Applied physics express 3.3 (2010): 31003-31003.
description	19.	Hawkridge, M E. "The structural quality of AlxGa1-xN epitaxial layers grown by digitally alloyed modulated precursor epitaxy determined by transmission electron microscopy." Applied physics letters 94.7 (2009): 71905-71905.
description	20.	Chiou, Y Z. "The effect of the intrinsic layer on the reliability of nitride-based p-i-n photodetectors." Semiconductor Science and Technology 24.5 (2009): 55004-55004.