ExLibris header image
SFX Logo
Title: Low frequency noise in InAlAs/InGaAs modulation doped field effect transistors with 50-nm gate length
Source:

Journal of Applied Physics [0021-8979] Levinshtein, M E yr:2007


Collapse list of basic services Basic
Sorry, no full text available...
Please use the document delivery service (see below)  
Holding information
Holdings in library search engine ALBERT GO
Document delivery
Request document via Library/Bibliothek GO
Users interested in this article also expressed an interest in the following:
1. Foisy, M C. "The role of inefficient charge modulations in limiting thecurrent-gain cutoff frequency of the MODFET." IEEE transactions on electron devices 35.7 Part 1 (1988): 871-878. Link to SFX for this item
2. BALLINGALL, J. "PSEUDOMORPHIC INGAAS HIGH-ELECTRON-MOBILITY TRANSISTORS." Thin Solid Films 231.1-2 (1993): 95-106. Link to Full Text for this item Link to SFX for this item
3. Nguyen, L D. "Characterization of ultra-high-speed pseudomorphic AlGaAs/InGaAs (on GaAs) MODFETs." IEEE transactions on electron devices 36.10 (1989): 2243-. Link to SFX for this item
4. LARSON, L. "ULTRA-HIGH-SPEED MODULATION-DOPED FIELD-EFFECT TRANSISTORS - A TUTORIAL REVIEW." Proceedings of the IEEE 80.4 (1992): 494-518. Link to SFX for this item
5. Shinohara, K. "Correction to "Ultrahigh-speed pseudomorphic InGaAs/InAlAs HEMTs with 400-GHz cutoff frequency"." IEEE Electron Device Letters 23.2 (2002): 105-105. Link to SFX for this item
6. Stormer, H L. "Two?dimensional hole gas at a semiconductor heterojunction interface." Applied physics letters 36.8 (1980): 685-687. Link to Full Text for this item Link to SFX for this item
7. Malmkvist, M. "Epitaxial optimization of 130-nm gate-length InGaAs/InAlAs/InP HEMTs for high-frequency applications." IEEE transactions on electron devices 55.1 (2008): 268-275. Link to SFX for this item
8. Popov, V. "Tuning of ungated plasmons by a gate in the field-effect transistor with two-dimensional electron channel." Journal of applied physics 104.2 (2008): 24508-. Link to SFX for this item
9. Khoie, R. "A study of transconductance degradation in HEMT using a self-consistent Boltzmann-Poisson-Schrodinger solver." VLSI design 6.1 (1998): 73-7. Link to Full Text for this item Link to SFX for this item
10. Bouzgarrou, S. "Influence of interface states and deep levels on output characteristics of InAlAs/InGaAs/InP HEMTs." Materials science & engineering. C, Biomimetic materials, sensors and systems 28.5-6 (2008): 676-679. Link to SFX for this item
11. Mimura, T. "The early history of the high electron mobility transistor (HEMT)." IEEE transactions on microwave theory and techniques 50.3 (2002): 780-782. Link to SFX for this item
12. DINGLE, R. "ELECTRON MOBILITIES IN MODULATION-DOPED SEMICONDUCTOR HETEROJUNCTION SUPER-LATTICES." Applied physics letters 33.7: 665-667. Link to SFX for this item
View More...
View Less...
Select All Clear All

Expand list of advanced services Advanced
A service provided by the Library of the Wissenschaftspark Albert Einstein, Potsdam, Germany.
© 2005 SFX by Ex Libris Inc.