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Title: Mass‐Spectrometric Study of Sputtering of Single Crystals of GaAs by Low‐Energy A Ions
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Journal of Applied Physics [0021-8979] Comas, James yr:1967


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1. HARIU, T. "REACTIVE SPUTTERING OF GALLIUM NITRIDE THIN-FILMS FOR GAAS MIS STRUCTURES." Applied physics letters 32.4 (1978): 252-253. Link to Full Text for this item Link to SFX for this item
2. Guo, QX. "Heteroepitaxial growth of gallium nitride on (111)GaAs substrates by radio frequency magnetron sputtering." Journal of Crystal Growth 237 (2002): 1079-1083. Link to Full Text for this item Link to SFX for this item
3. KAJIWARA, K. "ANALYSIS OF ALGAAS GAAS SUPERLATTICES BY MEANS OF SPUTTER-ASSISTED AES, SEM AND TEM." Surface and interface analysis 15.7 (1990): 433-439. Link to Full Text for this item Link to SFX for this item
4. MALHERBE, ILR B. "PREFERENTIAL SPUTTERING OF GAAS." Surface and interface analysis 18.7 (1992): 491-495. Link to Full Text for this item Link to SFX for this item
5. SCAIFE, WJ. "SPUTTERING OF GAAS SINGLE CRYSTALS BY 8-16 KEV ARGON IONS." Talanta 15.11 (1968): 1217-. Link to Full Text for this item Link to SFX for this item
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