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Title: Aging tests of InP-based laser diodes heteroepitaxially grown on Si substrates
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Journal of Applied Physics [0021-8979] Sasaki, T yr:1998


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1. CHOI, HK. "GAAS-BASED DIODE-LASERS ON SI WITH INCREASED LIFETIME OBTAINED BY USING STRAINED INGAAS ACTIVE LAYER." Applied physics letters 59.21 (1991): 2634-2635. Link to Full Text for this item Link to SFX for this item
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