ExLibris header image
SFX Logo
Title: Unipolar behavior of asymmetrically doped strained Si0.5Ge0.5 tunneling field-effect transistors
Source:

Applied Physics Letters [0003-6951] Schmidt, M yr:2012


Collapse list of basic services Basic
Full text
Full text available via AIP Journals (American Institute of Physics)
GO
Document delivery
Request document via Library/Bibliothek GO
Users interested in this article also expressed an interest in the following:
1. Hu, J. "Impact of fixed charge on metal-insulator-semiconductor barrier height reduction." Applied physics letters 99.25 (2011): 252104-. Link to Full Text for this item Link to SFX for this item
2. Hu, J. "Novel contact structures for high mobility channel materials." MRS bulletin 36.02 (2011): 112-120. Link to SFX for this item
3. Grzybowski, G. "Next generation of Ge1-ySny (y = 0.01-0.09) alloys grown on Si(100) via Ge3H8 and SnD4: Reaction kinetics and tunable emission." Applied physics letters 101.7 (2012): 72105-. Link to Full Text for this item Link to SFX for this item
4. Zhou, Y. "Alleviation of Fermi-level pinning effect on metal/germanium interface by insertion of an ultrathin aluminum oxide." Applied physics letters 93.20 (2008): 202105-202105. Link to Full Text for this item Link to SFX for this item
5. Nishimura, T. "Evidence for strong Fermi-level pinning due to metal-induced gap states at metal/germanium interface." Applied physics letters 91.12 (2007): 123123-3. Link to Full Text for this item Link to SFX for this item
6. Dimoulas, A. "Fermi-level pinning and charge neutrality level in germanium." Applied physics letters 89.25 (2006): 252110-252110. Link to Full Text for this item Link to SFX for this item
7. Gupta, S. "Atomic layer deposition of Al2O3 on germanium-tin (GeSn) and impact of wet chemical surface pre-treatment." Applied physics letters 103.24 (2013): 241601-. Link to Full Text for this item Link to SFX for this item
8. Oehme, M. "GeSn p-i-n detectors integrated on Si with up to 4% Sn." Applied physics letters 101.14 (2012): 141110-. Link to Full Text for this item Link to SFX for this item
9. Chen, X. "Fully integrated graphene and carbon nanotube interconnects for gigahertz high-speed CMOS electronics." I.E.E.E. transactions on electron devices 57.11 (2010): 3137-3143. Link to SFX for this item
10. Nishimura, T. "Opportunities and challenges for Ge CMOS - Control of interfacing field on Ge is a key." Microelectronic Engineering 86.7-9 (2009): 1571-1576. Link to SFX for this item
11. Lieten, R. "Ohmic contact formation on n-type Ge." Applied physics letters 92.2 (2008): 22106-1. Link to Full Text for this item Link to SFX for this item
12. Stareev, G. "A controllable mechanism of forming extremely low-resistance nonalloyed ohmic contacts to group III-V compound semiconductors." Journal of applied physics 74.12 (1993): 7329-56. Link to Full Text for this item Link to SFX for this item
13. Herzler, J.. "Shock tube study of the reaction of H atoms with SnCl4." Physical chemistry chemical physics 4.21 (2002): 5259-5264. Link to Full Text for this item Link to SFX for this item
View More...
View Less...
Select All Clear All

Expand list of advanced services Advanced
A service provided by the Library of the Wissenschaftspark Albert Einstein, Potsdam, Germany.
© 2005 SFX by Ex Libris Inc.