ExLibris header image
SFX Logo
Title: Enhanced external radiative efficiency for 20.8% efficient single-junction GaInP solar cells
Source:

Applied Physics Letters [0003-6951] Geisz, J F yr:2013


Collapse list of basic services Basic
Full text
Full text available via AIP Journals (American Institute of Physics)
GO
Document delivery
Request document via Library/Bibliothek GO
Users interested in this article also expressed an interest in the following:
1. Lian, Jiang i. "0.6-eV bandgap In0.69Ga0.31As thermophotovoltaic devices with compositionally undulating step-graded InAsyP(1-y)buffers." Chinese physics B 22.2 (2013): 26802-. Link to Full Text for this item Link to SFX for this item
2. Wojtczuk, S. "Bifacial Growth InGaP/GaAs/InGaAs Concentrator Solar Cells." IEEE Journal of Photovoltaics 2.3 (2012): 371-376. Link to Full Text for this item Link to SFX for this item
3. Haverkamp, G. M. M. W. J. "Anomalous IV-characteristics of a GaAs solar cell under high irradiance." Solar energy materials and solar cells 104 (2012): 97-101. Link to SFX for this item
4. Tomasulo, S. "Metamorphic GaAsP and InGaP Solar Cells on GaAs." IEEE Journal of Photovoltaics 2.1 (2012): 56-61. Link to Full Text for this item Link to SFX for this item
Select All Clear All

Expand list of advanced services Advanced
A service provided by the Library of the Wissenschaftspark Albert Einstein, Potsdam, Germany.
© 2005 SFX by Ex Libris Inc.