Language
English
German
^M
Dutch
Spanish
Title:
Low power W:AlOx/WOx bilayer resistive switching structure based on conductive filament formation and rupture mechanism
Source:
Applied Physics Letters [0003-6951] Bai, Yue yr:2013
Basic
Full text
Full text available via
AIP Journals (American Institute of Physics)
Year:
Volume:
Issue:
Start Page:
Document delivery
Request document via
Library/Bibliothek
Users interested in this article also expressed an interest in the following:
description
1.
Lu, Yi M.
"Impact of Joule heating on the microstructure of nanoscale TiO2 resistive switching devices."
Journal of applied physics
113.16 (2013): 63703-63703.
description
2.
Sun, H.
"Synthesis of graphene–CNT hybrids via joule heating: Structural characterization and electrical transport."
Carbon
53 (2013): 260-268.
description
3.
Liu, J F.
"Well controlled multiple resistive switching states in the Al local doped HfO2 resistive random access memory device."
Journal of applied physics
113.16 (2013): 164507-.
description
4.
Chua, E K.
"Effect of metals and annealing on specific contact resistivity of GeTe/metal contacts."
Applied physics letters
101.1 (2012): 12107-.
description
5.
Yao, I-Chuan C.
"Fabrication and resistive switching characteristics of high compact Ga-doped ZnO nanorod thin film devices."
Nanotechnology
23.14 (2012): 145201-.
description
6.
Van Ben, C.
"Doping transition of doped ZnO nanorods measured by Kelvin probe force microscopy."
Thin solid films
520.14 (2012): 4622-4625.
description
7.
Karita, M.
"In situ TEM study on changes in structure and electrical conductance of carbon nanotube-gold contact induced by local joule heating."
Journal of materials science
48.2 (2013): 936-940.
description
8.
Zhang, C.
"Effect of nitrogen doping on anatase-rutile phase transformation of TiO2."
Applied surface science
258.20 (2012): 7997-8001.
description
9.
Chiu, F.
"Reliability characteristics and conduction mechanisms in resistive switching memory devices using ZnO thin films."
Nanoscale Research Letters
7.1 (2012): 178-178.
description
10.
Jiang, W.
"Mobility of oxygen vacancy in SrTiO3 and its implications for oxygen-migration-based resistance switching."
Journal of applied physics
110.3 (2011): 34509-.
description
11.
Kinoshita, K.
"Correlation between resistance-change effect in transition-metal oxides and secondary-electron contrast of scanning electron microscope images."
Journal of applied physics
110.6 (2011): 64503-64507.
description
12.
Tang, M H.
"Resistive switching behavior of La-doped ZnO films for nonvolatile memory applications."
Solid-state electronics
63.1 (2011): 100-104.
description
13.
Leem, D.
"Low-resistance and highly-reflective Zn-Ni solid solution/Ag ohmic contacts for flip-chip light-emitting diodes."
Applied physics letters
83.24 (2003): 4990-4992.
description
14.
Angelone, Leonardo M M.
"On the effect of resistive EEG electrodes and leads during 7 T MRI: simulation and temperature measurement studies."
Magnetic Resonance Imaging
24.6 (2006): 801-12.
View More...
View Less...
Select All
Clear All
Save Citations
Select Format
RefWorks
Reference Manager
EndNote
ProCite
Submit citation export
Advanced
Author
Other articles by this author? -- in
GeoRef
author:
Bai, Yue
Wu, Huaqiang
Zhang, Ye
Wu, Minghao
Zhang, Jinyu
Deng, Ning
Qian, He
Yu, Zhiping
last name
initials
Other articles by this author? -- in
Online Contents Geosciences
author:
Bai, Yue
Wu, Huaqiang
Zhang, Ye
Wu, Minghao
Zhang, Jinyu
Deng, Ning
Qian, He
Yu, Zhiping
last name
initials
Other articles by this author? -- using
Web of Science
author:
Bai, Yue
Wu, Huaqiang
Zhang, Ye
Wu, Minghao
Zhang, Jinyu
Deng, Ning
Qian, He
Yu, Zhiping
last name
initials
Web Search
Find related information in
a Web Search Engine
Excite
Google
HotBot
Ixquick
ZOO
Ask
Yahoo!
Bing
Naver
Search Terms:
Search for related information in
Google Scholar
Article Title
Author Name
Journal Title
Other Search
Search Terms:
A service provided by the
Library of the Wissenschaftspark Albert Einstein
, Potsdam, Germany.
© 2005 SFX by Ex Libris Inc.