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Title:	Indium stability on InGaAs during atomic H surface cleaning
Source:	Applied Physics Letters [0003-6951] Aguirre-Tostado, F S yr:2008

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description	1.	Huang, ML. "Energy-band parameters of atomic-layer-deposition Al2O3/InGaAs heterostructure." Applied physics letters 89.1 (2006): 12903-.
description	2.	Yang, J.-K. K. "Epitaxial growth and band alignment of (GdxLa1-x) 2O3 films on n-GaAs (0 0 1)." Micron 40.1 (2009): 114-117.
description	3.	Hinkle, C. "Frequency dispersion reduction and bond conversion on n-type GaAs by in situ surface oxide removal and passivation." Applied physics letters 91.16 (2007): 163512-163512.
description	4.	Assmuth, A. "The role of atomic hydrogen in pre-epitaxial silicon substrate cleaning." Applied Surface Science 253.20 (2007): 8389-8393.
description	5.	Ok, I. "Metal gate: HfO2 metal-oxide-semiconductor structures on high-indium-content InGaAs substrate using physical vapor deposition." Applied physics letters 92.11 (2008): 112904-.
description	6.	Xuan, Y. "Capacitance-voltage studies on enhancement-mode InGaAs metal-oxide-semiconductor field-effect transistor using atomic-layer-deposited AlO gate dielectric." Applied physics letters 88.26 (2006): 263518-1.
description	7.	McConville, C F. "Formation of metallic indium during atomic hydrogen cleaning of InN(0001) surfaces." Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms 249 (2006): 886-889.
description	8.	Ngai, T. "Improving <equation><font face='verdana'>SiO</font><sub>2</sub>/<font face='verdana'>SiGe</font></equation> interface of SiGe p-metal–oxide–silicon field-effect transistors using water vapor annealing." Applied physics letters 80.10 (2002): 1773-1775.
description	9.	DIANI, M. "SURFACE-STRUCTURE OF SI(001) TREATED BY HYDROGEN AND ARGON ELECTRON-CYCLOTRON RESONANCE PLASMAS." Applied surface science 62.1-2 (1992): 67-75.
description	10.	Metzger, W. K. K. "Effective electron mass and plasma filter characterization of n-type InGaAs and InAsP." Journal of applied physics 92.7 (2002): 3524-3529.
description	11.	Koveshnikov, S.. "Thermal stability of electrical and structural properties of GaAs-based metal-oxide-semiconductor capacitors with an amorphous LaAl O3 gate oxide." Applied physics letters 93.1 (2008): 12903-.
description	12.	Huang, M. "Energy-band parameters of atomic layer deposited Al2O3 and HfO2 on InxGa1-xAs." Applied physics letters 94.5 (2009): 52106-.
description	13.	Ok, I. "Influence of the substrate orientation on the electrical and material properties of GaAs metal-oxide-semiconductor capacitors and self-aligned transistors using HfO2 and silicon interface passivation layer." Applied physics letters 92.20 (2008): 202908-.
description	14.	Aguirre-Tostado, F. "S passivation of GaAs and band bending reduction upon atomic layer deposition of HfO2/Al2O3 nanolaminates." Applied physics letters 93.6 (2008): 61907-3.
description	15.	Miotti, L. "Metal transport and loss in ultrathin hafnium aluminate films on silicon studied by low, medium, and high energy ion beam analyses." Applied physics letters 89.1 (2006): 12904-.
description	16.	Tomkiewicz, P. "Comparative study of the GaAs(100) surface cleaned by atomic hydrogen." Applied Surface Science 252.21 (2006): 7647-7658.
description	17.	O'Connor, E. "In situ H2S passivation of In0.53Ga0.47As/InP metal-oxide-semiconductor capacitors with atomic-layer deposited HfO2 gate dielectric." Applied physics letters 92.2 (2008): 22902-22904.
description	18.	Mulvaney, S P P. "Raman spectroscopy." Analytical chemistry 70.12 (2000): 145-157.
description	19.	Zhang, X. "Photoluminescence study of InSb/AlxIn1-xSb quantum wells." Applied physics letters 89.2 (2006): 21907-3488.
description	20.	Hinkle, C. "GaAs interfacial self-cleaning by atomic layer deposition." Applied physics letters 92.7 (2008): 71901-71901.