ExLibris header image
SFX Logo
Title: Degradation of polycrystalline HfO2-based gate dielectrics under nanoscale electrical stress
Source:

Applied Physics Letters [0003-6951] Iglesias, V yr:2011


Collapse list of basic services Basic
Full text
Full text available via AIP Journals (American Institute of Physics)
GO
Document delivery
Request document via Library/Bibliothek GO
Users interested in this article also expressed an interest in the following:
1. Hudait, M K. "Energy band alignment of atomic layer deposited HfO2 on epitaxial (110)Ge grown by molecular beam epitaxy." Applied physics letters 102 (2013): 93109-. Link to Full Text for this item Link to SFX for this item
2. Lanza, M. "Polycrystallization effects on the nanoscale electrical properties of high-k dielectrics." Nanoscale Research Letters 6.1 (2011): 108-. Link to Full Text for this item Link to SFX for this item
3. Barnett, J. "Wet etch enhancement of HfO2 films by implant processing." Diffusion and defect data. [Pt. B], Solid state phenomena 92 (2003): 11-14. Link to SFX for this item
4. Saenger, Katherine L. "Crystallinity and wet etch behavior of HfO2 films grown by MOCVD." Materials Research Society symposia proceedings 786 (2003): 153-158. Link to SFX for this item
Select All Clear All

Expand list of advanced services Advanced