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Title: The fabrication of quantum wire structures through application of CCl4 towards lateral growth rate control of GaAs on patterned GaAs substrates
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Applied Physics Letters [0003-6951] Kim, Yong yr:1995


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Users interested in this article also expressed an interest in the following:
1. Kim, M. "Facet evolution during metalorganic vapor phase epitaxial growth on V-grooved high Miller index GaAs substrates." Journal of Crystal Growth 139.3 (1994): 231-237. Link to Full Text for this item Link to SFX for this item
2. Kim, Y. "Fabrication of quantum wire structures through application of CCI4 towards lateral growth rate control of GaAs on patterned GaAs substrates." Applied physics letters 67.13 (1995): 1871-1871. Link to Full Text for this item Link to SFX for this item
3. Kim, M. "Enhancement of side wall growth rate during MOVPE growth on patterned substrates with CCl4." Materials science & engineering. B, Solid-state materials for advanced technology 35.1 (1995): 214-218. Link to SFX for this item
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