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Title:	Infrared absorption of Li acceptors and shallow donors in ZnSe
Source:	Applied Physics Letters [0003-6951] Nakata, H yr:1999

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description	1.	HAASE, M. "BLUE-GREEN LASER-DIODES." Applied physics letters 59.11 (1991): 1272-1274.
description	2.	Venkatachalam, A. "Design strategies for InGaN-based green lasers." IEEE journal of quantum electronics 46.2 (2010): 238-245.
description	3.	Jain, S. "III-nitrides: Growth, characterization, and properties." Journal of applied physics 87.3 (2000): 965-1006.
description	4.	Nakamura, S. "InGaN-based multi-quantum-well-structure laser diodes." Japanese journal of applied physics. Supplement 35.1B (1996): 74-.
description	5.	Taniguchi, S. "100h II-VI blue-green laser diode." Electronics letters 32.6 (1996): 552-553.
description	6.	Reiss, P. "Highly Luminescent CdSe/ZnSe Core/Shell Nanocrystals of Low Size Dispersion." Nano letters 2.7 (2002): 781-784.
description	7.	Sridharan, S. "Geiger mode simulation of GaN homojunction avalanche photodetectors." Physica status solidi. C, Current topics in solid state physics 6.2 (2009): -5.
description	8.	Vurgaftman, I. "Band parameters for III-V compound semiconductors and their alloys." Journal of applied physics 89.11 (2001): 5815-5875.
description	9.	Nakamura, S. "InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices grown on an epitaxially laterally overgrown GaN substrate." Applied physics letters 72.2 (1998): 211-213.
description	10.	Yoder, P D. "Quasi-unipolar InGaAs/InP photodetection for enhanced optical saturation power and maximal bandwidth." Applied physics letters 91.6 (2007): 62114-1.
description	11.	Venkatachalam, A. "Nitride band-structure model in a quantum well laser simulator." Optical and quantum electronics 40.5 (2008): 295-9.
description	12.	Chiaria, S. "Design criteria for near-ultraviolet GaN-based light-emitting diodes." IEEE transactions on electron devices 57.1 (2010): 60-70.
description	13.	Kneissl, M. "Continuous-wave operation of ultraviolet InGaN/InAlGaN multiple-quantum-well laser diodes." Applied physics letters 82 (2003): 2386-8.
description	14.	Ho, I. "Solid phase immiscibility in GaInN." Applied physics letters 69.18 (1996): 2701-2703.
description	15.	Talapin, D.V. V. "CdSe/CdS/ZnS and CdSe/ZnSe/ZnS core-shell-shell nanocrystals." The journal of physical chemistry. B, Condensed matter, materials, surfaces, interfaces & biophysical 108.49 (2004): 18826-18831.
description	16.	Danek, M. "Synthesis of Luminescent Thin-Film CdSe/ZnSe Quantum Dot Composites Using CdSe Quantum Dots Passivated with an Overlayer of ZnSe." Chemistry of materials 8.1 (1996): 173-180.
description	17.	Peng, Z. m. "Formation of high-quality CdTe, CdSe, and CdS nanocrystals using CdO as precursor." Journal of the American Chemical Society 123.1 (2001): 183-184.
description	18.	Toda, A. "MOCVD-grown blue-green laser diode." Electronics letters 31.22 (1995): 1921-2.
description	19.	Haase, M A. "II–VI semiconductor color converters for efficient green, yellow, and red light emitting diodes." Applied physics letters 96.23 (2010): 231116-.
description	20.	Nakayama, N. "Room temperature continuous operation of blue-green laser diodes." Electronics letters 29.16 (1993): 1488-1378.