ExLibris header image
SFX Logo
Title: Passivation of Si donors and DX centers in AlGaAs by hydrogen plasma exposure
Source:

Applied Physics Letters [0003-6951] Nabity, J C yr:1987


Collapse list of basic services Basic
Full text
Full text available via AIP Digital Archive
GO
Full text available via AIP Journals (American Institute of Physics)
GO
Document delivery
Request document via Library/Bibliothek GO
Users interested in this article also expressed an interest in the following:
1. Veprek, S. "Surface hydrogen content and passivation of silicon deposited by plasma induced chemical vapor deposition from silane and the implications for the reaction mechanism." Journal of vacuum science & technology. A. Vacuum, surfaces, and films 7.4 (1989): 2614-2624. Link to SFX for this item
2. EDWARDS, A. "INTERACTION OF H AND H-2 WITH THE SILICON DANGLING ORBITAL AT THE (111) SI/SIO2 INTERFACE." Physical review. B, Condensed matter and materials physics 44.4 (1991): 1832-1838. Link to Full Text for this item Link to SFX for this item
3. Ebong, A. "The effect of low and high temperature anneals on the hydrogen content and passivation of Si surface coated with SiO2 and SiN films." Journal of the Electrochemical Society 146.5 (1999): 1921-4. Link to SFX for this item
4. Bernstein, J D. "High dose-rate hydrogen passivation of polycrystalline silicon CMOS TFTs by plasma ion implantation." IEEE transactions on electron devices 43.11 (1996): 1876-1882. Link to SFX for this item
5. Seager, C H. "Studies of the hydrogen passivation of silicon grain boundaries." Journal of applied physics 52.2 (1981): 1050-1055. Link to Full Text for this item Link to SFX for this item
6. Watanabe, D. "High selectivity (SiN/SiO2) etching using an organic solution containing anhydrous HF." Microelectronic engineering 86.11 (2009): 2161-2164. Link to SFX for this item
7. Mihailetchi, V. "Nitric acid pretreatment for the passivation of boron emitters for n -type base silicon solar cells." Applied physics letters 92.6 (2008): 63510-63510. Link to Full Text for this item Link to SFX for this item
8. Grant, Keith E. "Passivation of a (100) silicon surface by silicon dioxide grown in nitric acid." IEEE electron device letters 30.9 (2009): 922-4. Link to Full Text for this item Link to SFX for this item
9. Das, U. "Surface passivation and heterojunction cells on Si (100) and (111) wafers using dc and rf plasma deposited Si : H thin films." Applied physics letters 92.6 (2008): 63504-. Link to Full Text for this item Link to SFX for this item
Select All Clear All

Expand list of advanced services Advanced