ExLibris header image
SFX Logo
Title: Enhancement mode InP metal‐insulator‐semiconductor field‐effect transistors grown by chemical beam epitaxy
Source:

Applied Physics Letters [0003-6951] Antreasyan, A yr:1986


Collapse list of basic services Basic
Full text
Full text available via AIP Digital Archive
GO
Full text available via AIP Journals (American Institute of Physics)
GO
Document delivery
Request document via Library/Bibliothek GO
Users interested in this article also expressed an interest in the following:
1. Iwase, Y. "Enhancement of effective electron mobility in the channel of InP metal-insulator-semiconductor field-effect transistors." Applied physics letters 53.7 (1988): 565-567. Link to Full Text for this item Link to SFX for this item
2. Al Refaie, S N. "New Plasma Oxidation of InP for IGFET." Japanese journal of applied physics 27.2R (1988): 273-279. Link to SFX for this item
3. Shei, S. "$\bf SiO_{2}/InP$ Structure Prepared by Direct Photo-Chemical Vapor Deposition Using Deuterium Lamp and Its Applications to Metal-Oxide-Semiconductor Field-Effect Transistor." Japanese journal of applied physics 34.2R (1995): 476-481. Link to SFX for this item
Select All Clear All

Expand list of advanced services Advanced
A service provided by the Library of the Wissenschaftspark Albert Einstein, Potsdam, Germany.
© 2005 SFX by Ex Libris Inc.