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Title: Electronic mobility gap structure and deep defects in amorphous silicon‐germanium alloys
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Applied Physics Letters [0003-6951] Unold, Thomas yr:1994


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1. Mahan, A H. "Saturated defect densities of hydrogenated amorphous silicon grown by hot-wire chemical vapor deposition at rates up to 150 Å/s." Applied physics letters 78.24 (2001): 3788-3790. Link to Full Text for this item Link to SFX for this item
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