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Title:	On the super lateral growth phenomenon observed in excimer laser‐induced crystallization of thin Si films
Source:	Applied Physics Letters [0003-6951] Im, James yr:1994

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description	1.	COOMBS, J. "LASER-INDUCED CRYSTALLIZATION PHENOMENA IN GETE-BASED ALLOYS .2. COMPOSITION DEPENDENCE OF NUCLEATION AND GROWTH." Journal of applied physics 78.8 (1995): 4918-4928.
description	2.	IM, J. "PHASE-TRANSFORMATION MECHANISMS INVOLVED IN EXCIMER-LASER CRYSTALLIZATION OF AMORPHOUS-SILICON FILMS." Applied physics letters 63.14 (1993): 1969-1971.
description	3.	Steinbach, I. "Phase-field simulation of rapid crystallization of silicon on substrate." Materials science & engineering. A, Structural materials 449 (2007): 95-98.
description	4.	Andra, G. "Laser crystallized multicrystalline silicon thin films on glass." Thin solid films 487.1/2 (2005): 77-80.
description	5.	Gundlach, David J. "Pentacene TFT with improved linear region characteristics usingchemically modified source and drain electrodes." IEEE electron device letters 22.12 (2001): 571-573.
description	6.	Jongenelis, A.P.J.M. M. "Laser-induced crystallization phenomena in GeTe-based alloys. III. GeTeSe alloys for a CD compatible erasable disk." Journal of applied physics 79.11 (1996): 8349-8356.
description	7.	ROORDA, S. "STRUCTURAL RELAXATION AND DEFECT ANNIHILATION IN PURE AMORPHOUS-SILICON." Physical review. B, Condensed matter 44.8 (1991): 3702-3725.
description	8.	Shtein, M. "Effects of film morphology and gate dielectric surface preparation on the electrical characteristics of organic-vapor-phase-deposited pentacene thin-film transistors." Applied physics letters 81.2 (2002): 268-270.
description	9.	Booker, G R. "Diffraction contrast analysis of two-dimensional defects present in silicon after annealing." Philosophical magazine 13.121 (1966): 71-83.
description	10.	Andra, G. "Multicrystalline LLC-silicon thin film cells on glass." 2002.
description	11.	Saboundji, A. "Thin film transistors on large single crystalline regions of silicon induced by cw laser crystallization." Journal of non-crystalline solids 338.1 (2004): 758-761.
description	12.	Savchuk, A I. "Electrical, photoelectrical properties and crystal structure of A(2)B(6)films, grown by laser sputtering." Thin Solid Films 511-512.Complete (2006): 478-482.
description	13.	Suzuki, T. "Two-dimensional facet crystal growth of silicon from undercooled melt of Si-Ni alloy." Materials science & engineering. A, Structural materials 449 (2007): 99-104.
description	14.	GEIS, M. "CRYSTALLOGRAPHIC ORIENTATION OF SILICON ON AN AMORPHOUS SUBSTRATE USING AN ARTIFICIAL SURFACE-RELIEF GRATING AND LASER CRYSTALLIZATION." Applied physics letters 35.1 (1979): 71-74.
description	15.	Donovan, EP. "Heat of crystallization and melting point of amorphous silicon." Applied physics letters 42.8 (1983): 698-700.
description	16.	Perdew, J. "Restoring the density-gradient expansion for exchange in solids and surfaces." Physical review letters 100.13 (2008): 136406-4.
description	17.	Gundlach, D. J. "Pentacene Organic Thin-Film Transistors—Molecular Ordering and Mobility." IEEE electron device letters 18.3 (1997): 87-89.
description	18.	Meyer zu Heringdorf, F J J. "Growth dynamics of pentacene thin films." Nature 412.6846 (2001): 517-20.
description	19.	Xia, Y. "Soft lithography." Annual review of materials science 28.1 (1998): 153-184.
description	20.	Canilho, N. "Comblike liquid-crystalline polymers from ionic complexation of dendronized polymers and lipids." Macromolecules 40.8 (2007): 2822-2830.