ExLibris header image
SFX Logo
Title: Excitation wavelength dependence of terahertz emission from InN and InAs
Source:

Applied Physics Letters [0003-6951] Chern, Grace yr:2006


Collapse list of basic services Basic
Full text
Full text available via AIP Journals (American Institute of Physics)
GO
Document delivery
Request document via Library/Bibliothek GO
Users interested in this article also expressed an interest in the following:
1. Gallinat, C. S. S. "A growth diagram for plasma-assisted molecular beam epitaxy of In-face InN." Journal of applied physics 102.6 (2007): 64907-1. Link to SFX for this item
2. Morris, D. "Carrier energy relaxation by means of Auger processes in InAs/GaAs self-assembled quantum dots." Applied physics letters (1999): 3593-. Link to Full Text for this item Link to SFX for this item
3. Koblmuller, G. "Optimization of the surface and structural quality of N-face InN grown by molecular beam epitaxy." Applied physics letters 89.7 (2006): 71902-1. Link to Full Text for this item Link to SFX for this item
4. Veal, TD. "In adlayers on c-plane InN surfaces: A polarity-dependent study by x-ray photoemission spectroscopy." Physical review. B, Condensed matter and materials physics 76.7 (2007): 75313-1. Link to Full Text for this item Link to SFX for this item
5. Gallinat, Chad S. "In-polar InN grown by plasma-assisted molecular beam epitaxy." Applied physics letters 89.3 (2006): 32109-1. Link to Full Text for this item Link to SFX for this item
6. SeelmannEggebert, M. "Polarity of (00.1) GaN epilayers grown on a (00.1) sapphire." Applied physics letters 71.18 (1997): 2635-2637. Link to Full Text for this item Link to SFX for this item
7. Arnaudov, B. "Electron concentration and mobility profiles in InN layers grown by MBE." Physica status solidi. A, Applied research 203.7 (2006): 1681-5. Link to Full Text for this item Link to SFX for this item
8. Ishioka, K. "Temperature dependence of coherent A(1g) and E-g phonons of bismuth." Journal of applied physics 100.9 (2006): 93501-93501. Link to SFX for this item
9. Naoi, H. "Growth and properties of InN, InGaN, and InN/InGaN quantum wells." Physica status solidi. A, Applied research 203.1 (2006): 93-101. Link to Full Text for this item Link to SFX for this item
10. Zheng, H. "Wetting of GaN islands by excess Ga: Origin of different appearances of GaN islands in scanning tunneling microscopy." Physical review. B, Condensed matter and materials physics 75.20 (2007): 205310-1. Link to Full Text for this item Link to SFX for this item
11. Wu, C. "The effects of AlN buffer on the properties of InN epitaxial films grown on Si(111) by plasma-assisted molecular-beam epitaxy." Journal of crystal growth 288.2 (2006): 247-53. Link to SFX for this item
12. WANG, X. "Molecular beam epitaxy growth of GaN, AlN and InN." Progress in crystal growth and characterization of materials 48.1-3 SPEC. ISS. (2004): 42-103. Link to SFX for this item
13. King, Philip C. "Universality of electron accumulation at wurtzite c- and a-plane and zinc-blende InN surfaces." Applied physics letters 91.9 (2007): 92101-. Link to Full Text for this item Link to SFX for this item
14. Onuma, T. "Radiative and nonradiative lifetimes in nonpolar m-plane InxGa1-xN/GaN multiple quantum wells grown on GaN templates prepared by lateral epitaxial overgrowth." Journal of vacuum science & technology. B, Microelectronics and nanometer structures 25.4 (2007): 1524-1528. Link to SFX for this item
15. Naoi, H. "Structural and luminescence properties of In-rich InGaN layers grown on InN templates by RF-MBE." Physica status solidi. A, Applied research 202.14 (2005): 2642-7. Link to Full Text for this item Link to SFX for this item
16. Grandal, J. "Morphology and optical properties of InN layers grown by molecular beam epitaxy on silicon substrates." Physica status solidi. C 2.7 (2005): 2289-92. Link to Full Text for this item Link to SFX for this item
17. Chwalek, J M. "Subpicosecond time‐resolved studies of coherent phonon oscillations in thin‐film YBa2Cu3O6 x (x≪0.4)." Applied physics letters 58.9 (1991): 980-982. Link to Full Text for this item Link to SFX for this item
18. Wegkamp, D. "Ultrafast changes in lattice symmetry probed by coherent phonons." Nature communications 3 (2012): 721-. Link to Full Text for this item Link to SFX for this item
19. Hite, J K. "GaN vertical and lateral polarity heterostructures on GaN substrates." Journal of Crystal Growth 332.1 (2011): 43-7. Link to SFX for this item
20. Oliver, R A. "Gallium nitride surface preparation optimised using in situ scanning tunnelling microscopy." Applied surface science 214.1 (2003): 1-10. Link to SFX for this item
View More...
View Less...
Select All Clear All

Expand list of advanced services Advanced