SFX by Ex Libris Inc.

Title:	Photoluminescence study of InAsSb/InAsSbP heterostructures grown by low‐pressure metalorganic chemical vapor deposition
Source:	Applied Physics Letters [0003-6951] Kim, S yr:1996

Basic

Full text

Full text available via AIP Digital Archive

Year:

Volume:

Issue:

Start Page:

Full text available via AIP Journals (American Institute of Physics)

Year:

Volume:

Issue:

Start Page:

Document delivery

Request document via Library/Bibliothek

Users interested in this article also expressed an interest in the following:
description	1.	Hiroki, M. "Compressively Strained InxAl1-xN/Al0.22Ga0.78N/GaN (x=0.245-0.325) Heterostructure Field Effect Transistors with Regrown AlGaN Contact Layers." Japanese Journal Of Applied Physics 49.4 (2010): 4-.
description	2.	Vilalta-Clemente, A. "The structure of InAlN/GaN heterostructures for high electron mobility transistors." Physica status solidi. A, Applications and materials science 207.5 (2010): 1105-1108.
description	3.	Suk, C. "Improvement of peak quantum efficiency and efficiency droop in III-nitride visible light-emitting diodes with an InAlN electron-blocking layer." Applied physics letters 96.22 (2010): 221105-221105.
description	4.	Miao, Z L. "Strain effects on InxAl1-xN crystalline quality grown on GaN templates by metalorganic chemical vapor deposition." Journal of applied physics 107.4 (2010): 43515-43515.
description	5.	Kuzmik, J. "Technology and performance of InAlN/AlN/GaN HEMTs with gate insulation and current collapse suppression using ZrO2 or HfO2." IEEE transactions on electron devices 55.3 (2008): 937-941.
description	6.	Kim, H. "Improvement of quantum efficiency by employing active-layer-friendly lattice-matched InAlN electron blocking layer in green light-emitting diodes." Applied physics letters 96.10 (2010): 101102-101102.
description	7.	Pozzovivo, G. "Gate insulation and drain current saturation mechanism in InAlNâ GaN metal-oxide-semiconductor high-electron-mobility transistors." Applied physics letters 91.4 (2007): 43509-1.
description	8.	Sadler, T. "The effect of temperature and ammonia flux on the surface morphology and composition of InxAl1-xN epitaxial layers." Journal of Crystal Growth 311.13 (2009): 3380-3385.
description	9.	Ťapajna, M. "Thermally induced voltage shift in capacitance-voltage characteristics and its relation to oxide/semiconductor interface states in Ni/Al2O3/InAlN/GaN heterostructures." Semiconductor Science and Technology 24.3 (2009): 35008-35008.
description	10.	Gorczyca, I. "In-clustering induced anomalous behavior of band gap in InAlN and InGaN." Physica status solidi. C, Current topics in solid state physics 7.5 (2010): 1283-6.
description	11.	Hiroki, M. "Dependence of Electrical Properties of InAlN/GaN and InAlN/AlGaN/GaN Heterostructures FETs on the AlN Interlayer Thickness." IEICE transactions on electronics 93.5 (2010): 579-84.
description	12.	Zhang, S. "High electron mobility and low sheet resistance in lattice-matched AlInN/AlN/GaN/AlN/GaN double-channel heterostructure." Applied physics letters 95.21 (2009): 212101-212101.
description	13.	Choi, S. "Geiger-Mode Operation of GaN Avalanche Photodiodes Grown on GaN Substrates." IEEE photonics technology letters 21.20 (2009): 1526-1528.
description	14.	Reiher, F. "Metalorganic vapor-phase epitaxy of GaN layers on Si substrates with Si(110) and other high-index surfaces." Journal of Crystal Growth 312.2 (2010): 180-4.
description	15.	Gokden, R. "Comparison of the transport properties of high quality AlGaN/AlN/GaN and AlInN/AlN/GaN two-dimensional electron gas heterostructures." Journal of applied physics 105.1 (2009): 13707-13707.
description	16.	Chikhaoui, W. "Current deep level transient spectroscopy analysis of AlInN/GaN high electron mobility transistors: Mechanism of gate leakage." Applied physics letters 96.7 (2010): 72107-72107.
description	17.	Gokden, S. "Mobility limiting scattering mechanisms in nitride-based two-dimensional heterostructures with the InGaN channel." Semiconductor Science and Technology 25.4 (2010): 45024-45024.
description	18.	Fischer, A. "Effect of Growth Temperature on the Electron-Blocking Performance of InAlN Layers in Green Emitting Diodes." Applied physics express 3.3 (2010): 31003-31003.
description	19.	Koblmu¨ller, G. "High-temperature molecular beam epitaxial growth of AlGaN/GaN on GaN templates with reduced interface impurity levels." Journal of applied physics 107.4 (2010): 43527-43527.
description	20.	Kumar, V. "Self-aligned AlGaN/GaN high electron mobility transistors with 0.18 mu m gate-length." Electronics letters 44.22 (2008): 1323-1325.