Abstract
The photoluminescence spectra and kinetics of both erbium-doped and undoped multilayer structures of quasi-ordered silicon nanocrystals in a silicon dioxide matrix were studied. It was shown that the optical excitation energy of silicon nanocrystals 2–3 nm in size can be practically completely transferred to Er3+ ions in the oxide surrounding the nanocrystals, with its subsequent radiation at 1.5 µm. Possible reasons for the high excitation efficiency of the Er3+ ions are discussed, and the conclusion is drawn that the Förster mechanism is dominant in the energy transfer processes occurring in these structures.
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Translated from Fizika Tverdogo Tela, Vol. 46, No. 1, 2004, pp. 105–109.
Original Russian Text Copyright © 2004 by Kashkarov, Kamenev, Lisachenko, Shalygina, Timoshenko, Schmidt, Heitmann, Zacharias.
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Kashkarov, P.K., Kamenev, B.V., Lisachenko, M.G. et al. High-efficiency erbium ion luminescence in silicon nanocrystal systems. Phys. Solid State 46, 104–108 (2004). https://doi.org/10.1134/1.1641933
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DOI: https://doi.org/10.1134/1.1641933