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Effect of in situ post-deposition annealing on the formation of α-In2Se3 thin films grown by elemental evaporation

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Abstract

Stoichiometric polycrystalline In2Se3 thin films have been grown by elemental evaporation on both glass and quartz substrates. The compositions are examined by DAN fluorimetry and X-ray photoelectron spectroscopy (XPS). Structure of the films are characterized by X-ray diffraction. The structure of this α-form of thin films have been determined to be hexagonal. Optimization of the preparative conditions employed for elemental evaporation, helped in preparing monophasic films by the suppression of other phases to a very minor extent. Influence of annealing conditions on the stoichiometry of the films are investigated in detail.

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  1. B. Thomas

    Present address: Solid State & Structural Chemistry Unit, Indian Institute of Science, 560012, Bangalore, India

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  1. Department of Physics, Cochin University of Science & Technology, 682022, Cochin, India

    B. Thomas

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Thomas, B. Effect of in situ post-deposition annealing on the formation of α-In2Se3 thin films grown by elemental evaporation. Appl. Phys. A 54, 293–299 (1992). https://doi.org/10.1007/BF00323853

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