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Title: Heteroepitaxy of a deposited amorphous germanium layer on a silicon substrate by laser annealing
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Thin Solid Films [0040-6090] Golecki, I yr:1979


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Users interested in this article also expressed an interest in the following:
1. Maenpaa, M. "Germanium-silicon heterostructures by crystallization of amorphous layers." Thin Solid Films 82.4 (1981): 347-. Link to Full Text for this item Link to SFX for this item
2. Maenpaa, M. "Crystallization of amorphous germanium-silicon (GexSi100-x) on silicon dioxide." Thin Solid Films 82.4 (1981): 343-. Link to Full Text for this item Link to SFX for this item
3. Kuech, T. F. "Epitaxial growth of germanium on (100) silicon by a simple chemical vapor deposition technique." Applied physics letters 39.3 (1981): 245-. Link to Full Text for this item Link to SFX for this item
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