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Title:	Bipolar resistive switching memory using bilayer TaOx/WOx films
Source:	Solid-State Electronics [0038-1101] Prakash, A yr:2012

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description	5.	Pan, F. "Recent progress in resistive random access memories: Materials, switching mechanisms, and performance." Materials science & engineering. R, Reports 83.1 (2014): 1-59.
description	6.	Zhou, Q. "Resistive switching characteristics of Pt/TaOx/HfNx structure and its performance improvement." AIP Advances 3.3 (2013): 32102-.
description	7.	Shvets, V. "Electronic structure and charge transport properties of amorphous Ta2O5 films." Journal of non-crystalline solids 354.26 (2008): 3025-3033.
description	8.	KRAFT, A. "Electrochemical ozone production using diamond anodes and a solid polymer electrolyte." Electrochemistry communications 8.5 (2006): 883-886.
description	9.	Kaneda, K. "Ti/Pt/(Pt-TaOx) electrode fabricated by thermal decomposition and Si/Pt/TaOx electrode fabricated by sputtering for ozone generation." Japanese journal of applied physics. Supplement 45.6A (2006): 5154-5162.
description	10.	Akinaga, H. "Resistive Random Access Memory (ReRAM) Based on Metal Oxides." Proceedings of the IEEE 98.12 (2010): 2237-2251.
description	11.	Ella Gale, E. "TiO2-based memristors and ReRAM: materials, mechanisms and models (a review)." Semiconductor science and technology 29.10 (2014): 1-.
description	12.	Kim, E. "Dual dielectric tunnel barrier in silicon-rich silicon nitride charge-trap nonvolatile memory." Applied physics letters 97.22 (2010): 222107-.
description	13.	Wu, Y. "Al2O3-Based RRAM Using Atomic Layer Deposition (ALD) With 1-mu A RESET Current." IEEE electron device letters 31.12 (2010): 1449-1451.
description	14.	Liborio, L. "Electronic structure of the Ti4O7 Magneacuteli phase." Physical review. B, Condensed matter and materials physics 79.24 (2009): 245133-.
description	15.	Nowotny, J. "Charge transfer at oxygen/zirconia interface at elevated temperatures - Part 4: Work function v. defect chemistry." Advances in Applied Ceramics 104.4 (2005): 174-180.
description	16.	Reith, T M. "The reactive sputtering of tantalum oxide: Compositional uniformity, phases, and transport mechanisms." Journal of vacuum science & technology. A. Vacuum, surfaces, and films 1.3 (1983): 1362-1369.
description	17.	Kaneda, K. "Ozone Generation by a TaO and Pt Composite Insulator-Coated Ti Electrode." Electrochemical and solid-state letters 8.6 (2005).
description	18.	Hwang, C. "Nanofilamentary resistive switching in binary oxide system; a review on the present status and outlook." Nanotechnology 22.25 (2011): 254002-254002.
description	19.	Jun Yao et al;, J. "Resistive Switches and Memories from Silicon Oxide." Nano letters 10.10 (2010): 4105-4110.
description	20.	Linn, E. "Complementary resistive switches for passive nanocrossbar memories." Nature Materials 9.5 (2010): 403-406.