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Valley-dependent magnetoresistance in two-dimensional semiconductors

Akihiko Sekine and Allan H. MacDonald
Phys. Rev. B 97, 201301(R) – Published 30 May 2018
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Abstract

We show theoretically that two-dimensional direct-gap semiconductors with a valley degree of freedom, including monolayer transition-metal dichalcogenides and gapped bilayer graphene, have a longitudinal magnetoconductivity contribution that is odd in valley and odd in the magnetic field applied perpendicular to the system. Using a quantum kinetic theory we show how this valley-dependent magnetoconductivity arises from the interplay between the momentum-space Berry curvature of Bloch electrons, the presence of a magnetic field, and disorder scattering. We discuss how the effect can be measured experimentally and used as a detector of valley polarization.

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  • Received 14 March 2018
  • Revised 16 May 2018

DOI:https://doi.org/10.1103/PhysRevB.97.201301

©2018 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Akihiko Sekine* and Allan H. MacDonald

  • Department of Physics, The University of Texas at Austin, Austin, Texas 78712, USA

  • *Present address: Center for Emergent Matter Science, RIKEN, Wako, Saitama 351-0198, Japan; akihiko.sekine@riken.jp

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Issue

Vol. 97, Iss. 20 — 15 May 2018

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