Abstract
In this paper, the effect of C incorporation on the out-diffusion of B dopant in SiGe during high-temperature annealing and the out-diffusion of B dopant at different annealing temperatures were studied. The experimental results indicated that more than 0.1% C incorporation had a significant inhibitory effect on the out-diffusion of B, but that the inhibition was obviously reduced when the processing temperature was over 1050 °C. In addition, because the atomic radius of C is smaller than that of Si, Ge, the C incorporation compensates the strain of SiGe, and adjusts the lattice mismatch, thus enhancing the thermal stability of SiGe.
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