Strained fold-assisted transport in graphene systems

R. Carrillo-Bastos, C. León, D. Faria, A. Latgé, E. Y. Andrei, and N. Sandler
Phys. Rev. B 94, 125422 – Published 15 September 2016

Abstract

Deformations in graphene systems are central elements in the novel field of straintronics. Various strain geometries have been proposed to produce specific properties, but their experimental realization has been limited. Because strained folds can be engineered on graphene samples on appropriate substrates, we study their effects on graphene transport properties. We show the existence of an enhanced local density of states (LDOS) along the direction of the strained fold that originates from localization of higher energy states and provides extra conductance channels at lower energies. In addition to exhibiting sublattice symmetry breaking, these states are valley polarized, with quasiballistic properties in smooth disorder potentials. We confirmed that these results persist in the presence of strong edge disorder, making these geometries viable electronic waveguides. These findings could be tested in properly engineered experimental settings.

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  • Received 3 April 2016
  • Revised 22 August 2016

DOI:https://doi.org/10.1103/PhysRevB.94.125422

©2016 American Physical Society

Authors & Affiliations

R. Carrillo-Bastos1,2, C. León3, D. Faria4, A. Latgé3, E. Y. Andrei5, and N. Sandler2

  • 1Facultad de Ciencias, Universidad Autónoma de Baja California, Apartado Postal 1880, 22800 Ensenada, Baja California, Mexico
  • 2Department of Physics and Astronomy, Ohio University, Athens, Ohio 45701-2979, USA
  • 3Instituto de Física, Universidade Federal Fluminense, Niterói, Avenida Litorânea sn, 24210-340 Rio de Janeiro, Brazil
  • 4Instituto Politécnico, Universidade do Estado de Rio de Janeiro, Nova Friburgo, Rua Bonfim 25, 28625-570 Rio de Janeiro, Brazil
  • 5Department of Physics and Astronomy, Rutgers University, Piscataway, New Jersey 08855, USA

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Issue

Vol. 94, Iss. 12 — 15 September 2016

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