Skyrmion domain wall collision and domain wall-gated skyrmion logic

Xiangjun Xing, Philip W. T. Pong, and Yan Zhou
Phys. Rev. B 94, 054408 – Published 4 August 2016
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Abstract

Skyrmions and domain walls are significant spin textures of great technological relevance to magnetic memory and logic applications, where they can be used as carriers of information. The unique topology of skyrmions makes them display emergent dynamical properties as compared with domain walls. Some studies have demonstrated that the two topologically inequivalent magnetic objects could be interconverted by using cleverly designed geometric structures. Here, we numerically address the skyrmion domain wall collision in a magnetic racetrack by introducing relative motion between the two objects based on a specially designed junction. An electric current serves as the driving force that moves a skyrmion toward a trapped domain wall pair. We see different types of collision dynamics depending on the driving parameters. Most importantly, the modulation of skyrmion transport using domain walls is realized in this system, allowing a set of domain wall-gated logical NOT, NAND, and NOR gates to be constructed. This work provides a skyrmion-based spin-logic architecture that is fully compatible with racetrack memories.

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  • Received 20 April 2016
  • Revised 10 July 2016

DOI:https://doi.org/10.1103/PhysRevB.94.054408

©2016 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Xiangjun Xing1,2, Philip W. T. Pong1, and Yan Zhou3,4,*

  • 1Department of Electrical and Electronic Engineering, The University of Hong Kong, Hong Kong, China
  • 2College of Physics and Electronic Information Engineering, Wenzhou University, Wenzhou 325035, China
  • 3Department of Physics, The University of Hong Kong, Hong Kong, China
  • 4School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China

  • *Author to whom correspondence should be addresed:yanzhou@hku.hk

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Issue

Vol. 94, Iss. 5 — 1 August 2016

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