ExLibris header image
SFX Logo
Title: Fermi level position, Coulomb gap, and Dresselhaus splitting in (Ga,Mn)As
Source:

Scientific Reports [2045-2322] yr:2016


Collapse list of basic services Basic
Full text
Full text available via PubMed Central
GO
Full text available via PubMed Central Open Access
GO
Document delivery
Request document via Library/Bibliothek GO
Users interested in this article also expressed an interest in the following:
1. Teng, L. "Effect of Quasi-Fermi Level on the Degree of Electron Spin Polarization in GaAs." Chinese Physics Letters 33.6 (2016): 64206-. Link to SFX for this item
2. Fang, Z. "Ab-initio studies on the electronic properties of Fe dopant in GaAs(110) surface." Computational materials science 118 (2016): 4-10. Link to SFX for this item
3. Ohtake, A. "Mn-Induced Surface Reconstructions on GaAs(001)." The journal of physical chemistry. C 120.11 (2016): 6050-6062. Link to Full Text for this item Link to SFX for this item
4. Tilley, Mervyn J. "Scanning tunneling microscopy contrast of isovalent impurities on the GaAs (110) surface explained with a geometrical model." Physical Review B 93.3 (2016). Link to Full Text for this item Link to SFX for this item
5. Misra, Mangla D. "Determination of band offsets at strained NiO and MgO heterojunction for MgO as an interlayer in heterojunction light emitting diode applications." Applied surface science 389 (2016): 835-839. Link to SFX for this item
Select All Clear All

Expand list of advanced services Advanced