Effect of Structural Relaxation on the Electronic Structure of Graphene on Hexagonal Boron Nitride

G. J. Slotman, M. M. van Wijk, Pei-Liang Zhao, A. Fasolino, M. I. Katsnelson, and Shengjun Yuan
Phys. Rev. Lett. 115, 186801 – Published 26 October 2015
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Abstract

We performed calculations of electronic, optical, and transport properties of graphene on hexagonal boron nitride with realistic moiré patterns. The latter are produced by structural relaxation using a fully atomistic model. This relaxation turns out to be crucially important for electronic properties. We describe experimentally observed features such as additional Dirac points and the “Hofstadter butterfly” structure of energy levels in a magnetic field. We find that the electronic structure is sensitive to many-body renormalization of the local energy gap.

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  • Received 15 July 2015

DOI:https://doi.org/10.1103/PhysRevLett.115.186801

© 2015 American Physical Society

Authors & Affiliations

G. J. Slotman1, M. M. van Wijk1, Pei-Liang Zhao2, A. Fasolino1, M. I. Katsnelson1, and Shengjun Yuan1,*

  • 1Institute for Molecules and Materials, Radboud University, Heyendaalseweg 135, 6525AJ Nijmegen, The Netherlands
  • 2Department of Applied Physics, Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, NL-9747AG Groningen, The Netherlands

  • *s.yuan@science.ru.nl

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Vol. 115, Iss. 18 — 30 October 2015

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