ExLibris header image
SFX Logo
Title: Components of channel capacitance in metal-insulator-semiconductor capacitors
Source:

Journal of Applied Physics [0021-8979] yr:2013


Collapse list of basic services Basic
Sorry, no full text available...
Please use the document delivery service (see below)  
Holding information
Holdings in library search engine ALBERT GO
Document delivery
Request document via Library/Bibliothek GO
Users interested in this article also expressed an interest in the following:
1. Shewchun, J. "The exact low-frequency capacitance-voltage characteristics of metal-oxide-semiconductor (MOS) and semiconductor-insulator-semiconductor (SIS) structures." IEEE Transactions on Electron Devices 18.4 (1971): 235-242. Link to SFX for this item
2. "Current-voltage characteristics of SIS structures with localized states in the material of the barrier layer." Journal of experimental and theoretical physics. 87.2: 375-381. Link to SFX for this item
3. Kaya, S. "A Comprehensive Study on the Frequency-Dependent Electrical Characteristics of Sm2O3 MOS Capacitors." IEEE Transactions on Electron Devices 62.3 (2015): 980-987. Link to SFX for this item
4. "Semiconductor-insulator-semiconductor (SIS) structures for high-performance optical modulation." 2018 23rd Opto-Electronics and Communications Conference (OECC) 1-1. Link to SFX for this item
5. Yang, N. "Modeling study of ultrathin gate oxides using direct tunneling current and capacitance-voltage measurements in MOS devices." IEEE transactions on electron devices 46.7 (1999): 1464-1471. Link to SFX for this item
Select All Clear All

Expand list of advanced services Advanced
A service provided by the Library of the Wissenschaftspark Albert Einstein, Potsdam, Germany.
© 2005 SFX by Ex Libris Inc.