Discretization of Electronic States in Large InAsP/InP Multilevel Quantum Dots Probed by Scanning Tunneling Spectroscopy

B. Fain, I. Robert-Philip, A. Beveratos, C. David, Z. Z. Wang, I. Sagnes, and J. C. Girard
Phys. Rev. Lett. 108, 126808 – Published 23 March 2012

Abstract

The topography and the electronic structure of InAsP/InP quantum dots are probed by cross-sectional scanning tunneling microscopy and spectroscopy. The study of the local density of states in such large quantum dots confirms the discrete nature of the electronic levels whose wave functions are measured by differential conductivity mapping. Because of their large dimensions, the energy separation between the discrete electronic levels is low, allowing for quantization in both the lateral and growth directions as well as the observation of the harmonicity of the dot lateral potential.

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  • Received 3 November 2011

DOI:https://doi.org/10.1103/PhysRevLett.108.126808

© 2012 American Physical Society

Authors & Affiliations

B. Fain, I. Robert-Philip, A. Beveratos, C. David, Z. Z. Wang, I. Sagnes, and J. C. Girard*

  • Laboratoire de Photonique et de Nanostructures LPN-CNRS UPR20, Route de Nozay, 91460 Marcoussis, France

  • *Corresponding author. jean-christophe.girard@lpn.cnrs.fr

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Issue

Vol. 108, Iss. 12 — 23 March 2012

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