NASA Logo

NTRS

NTRS - NASA Technical Reports Server

Collections About News Help Login
Back to Results
High-performance field effect transistors with self-assembled nanodielectricsField effect transistor devices comprising III-V semiconductors and organic gate dielectric materials, such dielectric materials as can afford flexibility in device design and fabrication.
Document ID
20100006888
Acquisition Source
Ames Research Center
Document Type
Other - Patent
Authors
Marks, Tobin J.
Ye, Peide
Facchetti, Antonio
Lu, Gang
Lin, Han Chung
Date Acquired
August 25, 2013
Publication Date
December 15, 2009
Subject Category
Electronics And Electrical Engineering
Funding Number(s)
CONTRACT_GRANT: NCC2-1363
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
Patent
US-Patent-7,633,130
Patent Application
US-Patent-Appl-SN-11/725,350

Related Records

There are no records associated with this record.
No Preview Available