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Carbon films grown from plasma on III-V semiconductorsDielectric carbon films were grown on n- and p-type GaAs and InP substrates using plasmas generated at 30 KHz from gaseous hydrocarbons. The effect of gas source, flow rate, and power on film growth were investigated. Methane and n-butane gases were utilized. The flow rate and power ranged from 30 to 50 sccm and 25 to 300 W, respectively. AES measurements show only carbon to be present in the films. The relative Ar ion sputtering rate (3 KeV) of carbon depends on the ratio power/pressure. In addition, the degree of asymmetry associated with the carbon-semiconductor interface is approximately power-independent. SIMS spectra indicate different H-C bonding configurations to be present in the films. Band gaps as high as 3.05 eV are obtained from optical absorption studies.
Document ID
19860002668
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Pouch, J. J. (NASA Lewis Research Center Cleveland, OH, United States)
Warner, J. D. (NASA Lewis Research Center Cleveland, OH, United States)
Liu, D. C. (NASA Lewis Research Center Cleveland, OH, United States)
Date Acquired
September 5, 2013
Publication Date
January 1, 1985
Subject Category
Solid-State Physics
Report/Patent Number
NASA-TM-87140
E-2766
NAS 1.15:87140
Meeting Information
Meeting: Meeting of the Electrochem. Soc.
Location: Las Vegas, NV
Country: United States
Start Date: October 11, 1985
End Date: October 17, 1985
Accession Number
86N12135
Funding Number(s)
PROJECT: RTOP 506-58-22
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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