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Analysis of defect structure in silicon. Silicon sheet growth development for the large area silicon sheet task of the Low-Cost Solar array ProjectOne hundred ninety-three silicon sheet samples, approximately 880 square centimeters, were analyzed for twin boundary density, dislocation pit density, and grain boundary length. One hundred fifteen of these samples were manufactured by a heat exchanger method, thirty-eight by edge defined film fed growth, twenty-three by the silicon on ceramics process, and ten by the dendritic web process. Seven solar cells were also step-etched to determine the internal defect distribution on these samples. Procedures were developed or the quantitative characterization of structural defects such as dislocation pits, precipitates, twin & grain boundaries using a QTM 720 quantitative image analyzing system interfaced with a PDP 11/03 mini computer. Characterization of the grain boundary length per unit area for polycrystalline samples was done by using the intercept method on an Olympus HBM Microscope.
Document ID
19820018915
Acquisition Source
Legacy CDMS
Document Type
Contractor Report (CR)
Authors
Natesh, R.
Mena, M.
Plichta, M.
Smith, J. M.
Sellani, M. A.
Date Acquired
September 4, 2013
Publication Date
April 1, 1982
Subject Category
Energy Production And Conversion
Report/Patent Number
JPL-9950-677
DOE/JPL-955676-1
MRI-289
NASA-CR-169058
NAS 1.26:169058
Accession Number
82N26791
Funding Number(s)
CONTRACT_GRANT: JPL-955676
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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