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Development and fabrication of improved power transistor switchesA new class of high-voltage power transistors was achieved by adapting present interdigitated thyristor processing techniques to the fabrication of npn Si transistors. Present devices are 2.3 cm in diameter and have V sub CEO (sus) in the range of 400 to 600V. V sub CEO (sus) = 450V devices were made with an (h sub FE)(I sub C) product of 900A at V sub CE = 2.5V. The electrical performance obtained was consistent with the predictions of an optimum design theory specifically developed for power switching transistors. The device design, wafer processing, and assembly techniques are described. Experimental measurements of the dc characteristics, forward SOA, and switching times are included. A new method of characterizing the switching performance of power transistors is proposed.
Document ID
19790013102
Acquisition Source
Legacy CDMS
Document Type
Contractor Report (CR)
Authors
Hower, P. L. (Westinghouse Research and Development Center Pittsburgh, PA, United States)
Chu, C. K. (Westinghouse Research and Development Center Pittsburgh, PA, United States)
Date Acquired
September 3, 2013
Publication Date
January 1, 1979
Subject Category
Electronics And Electrical Engineering
Report/Patent Number
NASA-CR-159524
Accession Number
79N21273
Funding Number(s)
CONTRACT_GRANT: NAS3-18916
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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