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Studies of silicon p-n junction solar cellsSingle crystal silicon p-n junction solar cells made with low resistivity substrates show poorer solar energy conversion efficiency than traditional theory predicts. The physical mechanisms responsible for this discrepancy are identified and characterized. The open circuit voltage in shallow junction cells of about 0.1 ohm/cm substrate resistivity is investigated under AMO (one sun) conditions.
Document ID
19770011613
Acquisition Source
Legacy CDMS
Document Type
Contractor Report (CR)
Authors
Lindholm, F. A.
(Florida Univ. Gainesville, FL, United States)
Date Acquired
September 3, 2013
Publication Date
July 23, 1976
Subject Category
Energy Production And Conversion
Report/Patent Number
NASA-CR-149669
Accession Number
77N18557
Funding Number(s)
CONTRACT_GRANT: NSG-3018
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
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