Abstract.
For the deposition of cubic boron nitride thin films in Ar–N2–BF3–H2 system by dc jet plasma chemical vapor deposition, the role of dc substrate bias ranging from -70 V to -150 V was investigated. A critical bias voltage was observed for the formation of cBN phase. The cBN content in the film increased with bias voltage and reached a maximum at the bias voltage of -85 V. Increasing the bias voltage further caused a decrease in cBN content and peeling of the films from the substrate. By combining the results of infrared spectroscopy, Raman spectroscopy and X-ray diffraction, the bias voltage was also found to strongly affect the crystal size, crystal quality and residual stress of the deposited films. A bias voltage a little higher than the critical value was demonstrated to be favorable for the deposition of a high-quality cBN film with large crystal size and low residual stress.
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Received: 13 June 2000 / Accepted: 21 June 2000 / Published online: 23 August 2000
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Zhang, W., Matsumoto, S. The effects of dc bias voltage on the crystal size and crystal quality. of cBN films. Appl Phys A 71, 469–472 (2000). https://doi.org/10.1007/s003390000605
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DOI: https://doi.org/10.1007/s003390000605