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Study of transient photoconductivity of GaN epilayer grown by metalorganic chemical vapor deposition

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Authors and Affiliations

  1. Department of Physics and Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, P.R. China, , , , , , CN

    Z.Z. Chen, B. Shen, X.Y. Zhang, R. Zhang, P. Chen, Y.G. Zhou, L. Zang, R.L. Jiang, Z.C. Huang & Y.D. Zheng

  2. Department of Electronic Engineering, Nanjing University, Nanjing 210093, P.R. China, , , , , , CN

    Z.S. Wu, X.T. Sun & F. Chen

Authors
  1. Z.Z. Chen
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  2. B. Shen
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  3. X.Y. Zhang
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  4. R. Zhang
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  5. P. Chen
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  6. Y.G. Zhou
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  7. L. Zang
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  8. R.L. Jiang
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  9. Z.C. Huang
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  10. Y.D. Zheng
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  11. Z.S. Wu
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  12. X.T. Sun
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  13. F. Chen
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Received: 24 March 1998/Accepted: 10 July 1998

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Chen, Z., Shen, B., Zhang, X. et al. Study of transient photoconductivity of GaN epilayer grown by metalorganic chemical vapor deposition . Appl Phys A 67, 567–570 (1998). https://doi.org/10.1007/s003390050823

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  • DOI: https://doi.org/10.1007/s003390050823

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