Skip to main content
SpringerLink
Log in

Fabrication of silicon nanowires

  • Regular paper
  • Published:
Applied Physics A Aims and scope Submit manuscript

2

at 750 °C and 850 °C. The oxide and interface morphology are characterized by cross-sectional scanning electron microscope images. It is found that the oxidized nanowire following oxidation at 750 °C still keeps its pentagon shape even if it has been oxidized for 19 h. However, the oxidized samples at 850 °C become circular in shape. The oxidation-temperature dependence of the sample shapes is discussed. Our results should be useful in generating silicon nanowires coated with SiO2 in microelectronic technology with careful selection of the SiO2 growth temperatures.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

Author information

Authors and Affiliations

  1. Department of Physics and Institute of Solid State Physics, Nanjing University, Nanjing 210093, P.R. China (Fax: +86-025/3608-130, E-mail: ydzheng@netra.nju.edu.cn), , , , , , CN

    J.L. Liu, Y. Lu, Y. Shi, S.L. Gu, R.L. Jiang, F. Wang & Y.D. Zheng

Authors
  1. J.L. Liu
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. Y. Lu
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. Y. Shi
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. S.L. Gu
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. R.L. Jiang
    View author publications

    You can also search for this author in PubMed Google Scholar

  6. F. Wang
    View author publications

    You can also search for this author in PubMed Google Scholar

  7. Y.D. Zheng
    View author publications

    You can also search for this author in PubMed Google Scholar

Additional information

Received: 26 September 1997/Accepted: 8 December 1997

Rights and permissions

Reprints and permissions

About this article

Cite this article

Liu, J., Lu, Y., Shi, Y. et al. Fabrication of silicon nanowires . Appl Phys A 66, 539–541 (1998). https://doi.org/10.1007/s003390050709

Download citation

  • Issue Date:

  • DOI: https://doi.org/10.1007/s003390050709

Search

Navigation